Does a dipole layer at the p-i interface reduce the built-in voltage of amorphous silicon p-i-n solar cells?

A. Nuruddin, John R Abelson

Research output: Contribution to journalArticlepeer-review

Abstract

The open-circuit voltage of amorphous silicon p-i-n solar cells is 0.1-0.3 V less than the total Fermi level shift in the p- and n-type layers. It was hypothesized that a dipole layer at the p-i interface reduces the potential drop across the i-layer. We determine the electrostatic potential profile using an in situ Kelvin probe during incremental depositions of p-type a-Si,C:H and undoped a-Si:H layers by direct current reactive magnetron sputtering. We confirm the existence of a dipole layer, but which produces a potential loss of only ∼20 mV. Thus, most of the "missing" voltage in solar cells must have other origins.

Original languageEnglish (US)
Pages (from-to)2797-2799
Number of pages3
JournalApplied Physics Letters
Volume71
Issue number19
DOIs
StatePublished - Nov 10 1997

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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