Distributed modeling of layout parasitics effects in CMOS power devices

Doris A. Chan, Milton Feng

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The effects of distributed power device model optimization and extraction techniques are incorporated to predict the fT, fmax, transducer power gain and output power in 130 nm CMOS. Small signal and large signal of BSIM-RF model, ICF-D1 model, and measured power device results are compared for model verification.

Original languageEnglish (US)
Title of host publicationEuropean Microwave Week 2010
Subtitle of host publicationConnecting the World, EuMIC 2010 - Conference Proceedings
Pages242-245
Number of pages4
StatePublished - 2010
Event13th European Microwave Week 2010: Connecting the World, EuMIC 2010 - Paris, France
Duration: Sep 26 2010Oct 1 2010

Other

Other13th European Microwave Week 2010: Connecting the World, EuMIC 2010
Country/TerritoryFrance
CityParis
Period9/26/1010/1/10

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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