TY - GEN
T1 - Distributed modeling of layout parasitics effects in CMOS power devices
AU - Chan, Doris A.
AU - Feng, Milton
PY - 2010
Y1 - 2010
N2 - The effects of distributed power device model optimization and extraction techniques are incorporated to predict the fT, fmax, transducer power gain and output power in 130 nm CMOS. Small signal and large signal of BSIM-RF model, ICF-D1 model, and measured power device results are compared for model verification.
AB - The effects of distributed power device model optimization and extraction techniques are incorporated to predict the fT, fmax, transducer power gain and output power in 130 nm CMOS. Small signal and large signal of BSIM-RF model, ICF-D1 model, and measured power device results are compared for model verification.
UR - http://www.scopus.com/inward/record.url?scp=78649588780&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=78649588780&partnerID=8YFLogxK
M3 - Conference contribution
AN - SCOPUS:78649588780
SN - 9782874870156
T3 - European Microwave Week 2010: Connecting the World, EuMIC 2010 - Conference Proceedings
SP - 242
EP - 245
BT - European Microwave Week 2010
T2 - 13th European Microwave Week 2010: Connecting the World, EuMIC 2010
Y2 - 26 September 2010 through 1 October 2010
ER -