Distributed feedback transistor laser

F. Dixon, M. Feng, N. Holonyak

Research output: Contribution to journalArticle

Abstract

Single longitudinal mode operation of an InGaP/GaAs/InGaAs quantum well heterojunction bipolar transistor laser is reported. A third order distributed feedback surface grating is fabricated in the top emitter AlGaAs confining layers using soft photocurable nanoimprint lithography. The device produces continuous wave laser operation with a peak wavelength λ=959.75 nm and threshold current IB =13 mA operating at -70°C. For devices with cleaved ends a sidemode suppression ratio >25 dB has been achieved.

Original languageEnglish (US)
Article number241103
JournalApplied Physics Letters
Volume96
Issue number24
DOIs
StatePublished - Jun 14 2010

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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