Single longitudinal mode operation of an InGaP/GaAs/InGaAs quantum well heterojunction bipolar transistor laser is reported. A third order distributed feedback surface grating is fabricated in the top emitter AlGaAs confining layers using soft photocurable nanoimprint lithography. The device produces continuous wave laser operation with a peak wavelength λ=959.75 nm and threshold current IB =13 mA operating at -70°C. For devices with cleaved ends a sidemode suppression ratio >25 dB has been achieved.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)