@article{181c2be66563471b97b1ff3c0e470872,
title = "Distributed feedback transistor laser",
abstract = "Single longitudinal mode operation of an InGaP/GaAs/InGaAs quantum well heterojunction bipolar transistor laser is reported. A third order distributed feedback surface grating is fabricated in the top emitter AlGaAs confining layers using soft photocurable nanoimprint lithography. The device produces continuous wave laser operation with a peak wavelength λ=959.75 nm and threshold current IB =13 mA operating at -70°C. For devices with cleaved ends a sidemode suppression ratio >25 dB has been achieved.",
author = "F. Dixon and M. Feng and N. Holonyak",
note = "Funding Information: N. Holonyak, Jr., is grateful for the support of the John Bardeen Chair (Sony) of Electrical and Computer Engineering and Physics, and M. Feng for the support of the Nick Holonyak, Jr., Chair of Electrical and Computer Engineering. We would like to thank Dr. K. Meneou and Professor K. Y. Cheng for the transfer and advice on nanoimprint lithography technology for DFB gratings. The authors would like to thank Dr. Michael Gerhold (Army Research Office) and acknowledge the support by Army Research Office, Grant No. W911NF-08-1-0469.",
year = "2010",
month = jun,
day = "14",
doi = "10.1063/1.3453656",
language = "English (US)",
volume = "96",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics",
number = "24",
}