Displacement detection of silicon nanowires by polarization-enhanced fiber-optic interferometry

John M. Nichol; Raffi Budakian; Eric R. Hemesath; Lincoln J. Lauhon

doi:10.1063/1.3025305

Displacement detection of silicon nanowires by polarization-enhanced fiber-optic interferometry

John M. Nichol, Raffi Budakian, Eric R. Hemesath, Lincoln J. Lauhon

University of Illinois Urbana-Champaign

Research output: Contribution to journal › Article › peer-review

Abstract

We describe the displacement detection of freestanding silicon [111] nanowires by fiber-optic interferometry. We observe approximately a 50-fold enhancement in the scattered intensity for nanowires 40-60 nm in diameter for incident light polarized parallel to the nanowire axis, as compared to perpendicular polarization. This enhancement enables us to achieve a displacement sensitivity of 0.5 pmHz for 15 μW of light incident on the nanowire. The nanowires exhibit ultralow mechanical dissipation in the range of (2× 10^-15) - (2× 10^-14) kgs and could be used as mechanical sensors for ultrasensitive scanning probe force measurements.

Original language	English (US)
Article number	193110
Journal	Applied Physics Letters
Volume	93
Issue number	19
DOIs	https://doi.org/10.1063/1.3025305
State	Published - 2008

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Physics and Astronomy (miscellaneous)

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10.1063/1.3025305

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title = "Displacement detection of silicon nanowires by polarization-enhanced fiber-optic interferometry",

abstract = "We describe the displacement detection of freestanding silicon [111] nanowires by fiber-optic interferometry. We observe approximately a 50-fold enhancement in the scattered intensity for nanowires 40-60 nm in diameter for incident light polarized parallel to the nanowire axis, as compared to perpendicular polarization. This enhancement enables us to achieve a displacement sensitivity of 0.5 pmHz for 15 μW of light incident on the nanowire. The nanowires exhibit ultralow mechanical dissipation in the range of (2× 10-15) - (2× 10-14) kgs and could be used as mechanical sensors for ultrasensitive scanning probe force measurements.",

author = "Nichol, {John M.} and Raffi Budakian and Hemesath, {Eric R.} and Lauhon, {Lincoln J.}",

note = "Funding Information: The authors thank Xin Zhao for assistance with the HF procedure. This work was supported by the Army Research Office through MURI Grant No. W911NF-05-0414 and was carried out in part in the Frederick Seitz Materials Research Laboratory Central Facilities, University of Illinois, which are partially supported by the U.S. Department of Energy under Grant Nos. DE-FG02-07ER46453 and DE-FG02-07ER46471. Work at Northwestern University was supported by the National Science Foundation through the NIRT program. ",

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AU - Nichol, John M.

AU - Budakian, Raffi

AU - Hemesath, Eric R.

AU - Lauhon, Lincoln J.

N1 - Funding Information: The authors thank Xin Zhao for assistance with the HF procedure. This work was supported by the Army Research Office through MURI Grant No. W911NF-05-0414 and was carried out in part in the Frederick Seitz Materials Research Laboratory Central Facilities, University of Illinois, which are partially supported by the U.S. Department of Energy under Grant Nos. DE-FG02-07ER46453 and DE-FG02-07ER46471. Work at Northwestern University was supported by the National Science Foundation through the NIRT program.

PY - 2008

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N2 - We describe the displacement detection of freestanding silicon [111] nanowires by fiber-optic interferometry. We observe approximately a 50-fold enhancement in the scattered intensity for nanowires 40-60 nm in diameter for incident light polarized parallel to the nanowire axis, as compared to perpendicular polarization. This enhancement enables us to achieve a displacement sensitivity of 0.5 pmHz for 15 μW of light incident on the nanowire. The nanowires exhibit ultralow mechanical dissipation in the range of (2× 10-15) - (2× 10-14) kgs and could be used as mechanical sensors for ultrasensitive scanning probe force measurements.

AB - We describe the displacement detection of freestanding silicon [111] nanowires by fiber-optic interferometry. We observe approximately a 50-fold enhancement in the scattered intensity for nanowires 40-60 nm in diameter for incident light polarized parallel to the nanowire axis, as compared to perpendicular polarization. This enhancement enables us to achieve a displacement sensitivity of 0.5 pmHz for 15 μW of light incident on the nanowire. The nanowires exhibit ultralow mechanical dissipation in the range of (2× 10-15) - (2× 10-14) kgs and could be used as mechanical sensors for ultrasensitive scanning probe force measurements.

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Displacement detection of silicon nanowires by polarization-enhanced fiber-optic interferometry

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