Disorder-induced allowed-forbidden phonon splittings in ion-etched epitaxial InP

J. E. Maslar, S. R. Kisting, P. W. Bohn, I. Adesida, D. G. Ballegeer, C. Caneau, R. Bhat

Research output: Contribution to journalArticlepeer-review

Abstract

A split in the frequencies between the longitudinal-optic (LO) phonon modes in the dipole-allowed and dipole-forbidden geometries is observed in ion-etched InP by Raman scattering. Dipole-forbidden LO-phonon scattering has been reported in pure as well as mixed crystals; however, a frequency split has been observed only in AlxGa1-xAs crystals. The observation of this split in InP is attributed to a relaxation of the selection rules due to the structural disorder induced by ion etching.

Original languageEnglish (US)
Pages (from-to)1820-1822
Number of pages3
JournalPhysical Review B
Volume46
Issue number3
DOIs
StatePublished - 1992

ASJC Scopus subject areas

  • Condensed Matter Physics

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