Disorder-induced allowed-forbidden phonon splittings in ion-etched epitaxial InP

J. E. Maslar; S. R. Kisting; P. W. Bohn; I. Adesida; D. G. Ballegeer; C. Caneau; R. Bhat

doi:10.1103/PhysRevB.46.1820

Disorder-induced allowed-forbidden phonon splittings in ion-etched epitaxial InP

J. E. Maslar, S. R. Kisting, P. W. Bohn, I. Adesida, D. G. Ballegeer, C. Caneau, R. Bhat

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Abstract

A split in the frequencies between the longitudinal-optic (LO) phonon modes in the dipole-allowed and dipole-forbidden geometries is observed in ion-etched InP by Raman scattering. Dipole-forbidden LO-phonon scattering has been reported in pure as well as mixed crystals; however, a frequency split has been observed only in AlxGa1-xAs crystals. The observation of this split in InP is attributed to a relaxation of the selection rules due to the structural disorder induced by ion etching.

Original language	English (US)
Pages (from-to)	1820-1822
Number of pages	3
Journal	Physical Review B
Volume	46
Issue number	3
DOIs	https://doi.org/10.1103/PhysRevB.46.1820
State	Published - 1992

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Condensed Matter Physics

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10.1103/PhysRevB.46.1820

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abstract = "A split in the frequencies between the longitudinal-optic (LO) phonon modes in the dipole-allowed and dipole-forbidden geometries is observed in ion-etched InP by Raman scattering. Dipole-forbidden LO-phonon scattering has been reported in pure as well as mixed crystals; however, a frequency split has been observed only in AlxGa1-xAs crystals. The observation of this split in InP is attributed to a relaxation of the selection rules due to the structural disorder induced by ion etching.",

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doi = "10.1103/PhysRevB.46.1820",

language = "English (US)",

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T1 - Disorder-induced allowed-forbidden phonon splittings in ion-etched epitaxial InP

AU - Maslar, J. E.

AU - Kisting, S. R.

AU - Bohn, P. W.

AU - Adesida, I.

AU - Ballegeer, D. G.

AU - Caneau, C.

AU - Bhat, R.

PY - 1992

Y1 - 1992

N2 - A split in the frequencies between the longitudinal-optic (LO) phonon modes in the dipole-allowed and dipole-forbidden geometries is observed in ion-etched InP by Raman scattering. Dipole-forbidden LO-phonon scattering has been reported in pure as well as mixed crystals; however, a frequency split has been observed only in AlxGa1-xAs crystals. The observation of this split in InP is attributed to a relaxation of the selection rules due to the structural disorder induced by ion etching.

AB - A split in the frequencies between the longitudinal-optic (LO) phonon modes in the dipole-allowed and dipole-forbidden geometries is observed in ion-etched InP by Raman scattering. Dipole-forbidden LO-phonon scattering has been reported in pure as well as mixed crystals; however, a frequency split has been observed only in AlxGa1-xAs crystals. The observation of this split in InP is attributed to a relaxation of the selection rules due to the structural disorder induced by ion etching.

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JO - Physical Review B

JF - Physical Review B

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Disorder-induced allowed-forbidden phonon splittings in ion-etched epitaxial InP

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