Abstract
Techniques to form dislocation cores along an interface of a multilayer thin film structure are described. The loading and/or deloading of isotopes of hydrogen are also described in association with core formation. The described techniques can provide be applied to superconductive structure formation, x-ray and charged particle generation, nuclear reaction processes, and/or inertial confinement fusion targets.
| Original language | English (US) |
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| U.S. patent number | 8227020 |
| State | Published - Jul 24 2012 |