Dislocation engineering in strained MOS materials

E. A. Fitzgerald, M. L. Lee, B. Yu, K. E. Lee, C. L. Dohrman, D. Isaacson, T. A. Langdo, D. A. Antoniadis

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Strain in electronic devices is receiving renewed interest due to the advantageous effects of strain on carrier mobility, and therefore drive current. However, the physics of strain incorporation, by definition, introduces the physics of strain relief. At typical CMOS process temperatures, semiconductors become ductile, and therefore dislocation nucleation and glide are the most common means of plastic relaxation. To obtain the highest levels of strain, dislocation nucleation and propagation must be avoided. It can be advantageous to create alternative lattice constants for creating strain in other regions, in which case plastic deformation is purposely created in the structure and dislocation sites must be managed. If the goal for the particular device is to create completely relaxed lattice constants, we show global and local methods to control threading dislocation densities. We also show methods to achieve the opposite, i.e. larger values of strain, higher than the level expected in equilibrium. By understanding the nature of dislocation nucleation and propagation, we can overcome future dislocation engineering challenges for new materials systems such as III-V MISFIT heterostructures.

Original languageEnglish (US)
Title of host publicationIEEE International Electron Devices Meeting, 2005 IEDM - Technical Digest
Pages513-516
Number of pages4
StatePublished - Dec 1 2005
Externally publishedYes
EventIEEE International Electron Devices Meeting, 2005 IEDM - Washington, DC, MD, United States
Duration: Dec 5 2005Dec 7 2005

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
Volume2005
ISSN (Print)0163-1918

Other

OtherIEEE International Electron Devices Meeting, 2005 IEDM
CountryUnited States
CityWashington, DC, MD
Period12/5/0512/7/05

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Fingerprint Dive into the research topics of 'Dislocation engineering in strained MOS materials'. Together they form a unique fingerprint.

Cite this