Discrete dopant effects in ultrasmall fully depleted ballistic SOI MOSFETs

Using a recursive scattering matrix variant, we examine the effects of discrete dopants on the threshold voltage of ultrasmall fully depleted SOI MOSFETs. We find that more highly doped channels produce more interference than do more lightly doped channels. This causes larger fluctuations in threshold voltage. Further, we find that the location of the channel dopants is quite important in the direction of the threshold voltage shift with dopants occurring closer to the source of the device having a larger impact.