Directed self-assembly by photostimulation of an amorphous semiconductor surface

Yevgeniy V. Kondratenko, Edmund G Seebauer

Research output: Contribution to journalArticle

Abstract

A method for nanoscale directed self-assembly is demonstrated that employs an amorphous semiconductor containing subcritical nuclei for crystallization. This strategy combines attractive features of top-down and bottom-up approaches by exploiting the self-organization capabilities latent in amorphous materials, but in a way that can be controlled by optical or electron beam exposure tools. The method was demonstrated with amorphous TiO2 deposited on silicon, heated to 270°C, and exposed to low-level ultraviolet light.

Original languageEnglish (US)
Pages (from-to)3206-3211
Number of pages6
JournalAIChE Journal
Volume56
Issue number12
DOIs
StatePublished - Dec 1 2010

Keywords

  • Chemical vapor deposition
  • Directed self-assembly
  • Nanofabrication
  • Photostimulated diffusion
  • Titanium oxide

ASJC Scopus subject areas

  • Biotechnology
  • Environmental Engineering
  • Chemical Engineering(all)

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