Direct Tunneling Modulation of Semiconductor Lasers

Junyi Qiu, Milton Feng, Nick Holonyak

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Direct tunneling modulation of semiconductor lasers is realized and demonstrated experimentally in the three-terminal transistor laser through the interaction between the photon absorption by voltage-controlled intra-cavity photon-assisted tunneling and the photon generation by auantum-well recombination.

Original languageEnglish (US)
Title of host publication2019 Conference on Lasers and Electro-Optics, CLEO 2019 - Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781943580576
DOIs
StatePublished - May 2019
Event2019 Conference on Lasers and Electro-Optics, CLEO 2019 - San Jose, United States
Duration: May 5 2019May 10 2019

Publication series

Name2019 Conference on Lasers and Electro-Optics, CLEO 2019 - Proceedings

Conference

Conference2019 Conference on Lasers and Electro-Optics, CLEO 2019
CountryUnited States
CitySan Jose
Period5/5/195/10/19

ASJC Scopus subject areas

  • Spectroscopy
  • Industrial and Manufacturing Engineering
  • Safety, Risk, Reliability and Quality
  • Management, Monitoring, Policy and Law
  • Electronic, Optical and Magnetic Materials
  • Radiology Nuclear Medicine and imaging
  • Instrumentation
  • Atomic and Molecular Physics, and Optics

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  • Cite this

    Qiu, J., Feng, M., & Holonyak, N. (2019). Direct Tunneling Modulation of Semiconductor Lasers. In 2019 Conference on Lasers and Electro-Optics, CLEO 2019 - Proceedings [8749687] (2019 Conference on Lasers and Electro-Optics, CLEO 2019 - Proceedings). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.23919/CLEO.2019.8749687