Strain relaxation in a graded Si1-xGex/Si heterostructure was examined using cross-sectional scanning tunneling microscopy. Observed were two strain relaxation mechanisms on the (111) cleaved surface. One was observed by stressing the substrate, and the other through defect formation. This finding is analogous to misfit dislocations observed in bulk strain relaxation.
|Original language||English (US)|
|Number of pages||3|
|Journal||Applied Physics Letters|
|State||Published - Apr 5 1999|
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)