Direct observation of minority carrier lifetime improvement in InAs/GaSb type-II superlattice photodiodes via interfacial layer control

Daniel Zuo; Pengfei Qiao; Daniel Wasserman; Shun Lien Chuang

doi:10.1063/1.4801764

Direct observation of minority carrier lifetime improvement in InAs/GaSb type-II superlattice photodiodes via interfacial layer control

Daniel Zuo, Pengfei Qiao, Daniel Wasserman, Shun Lien Chuang

Research output: Contribution to journal › Article › peer-review

Abstract

We present improved performance in strain-balanced InAs/GaSb type-II superlattice photodetectors grown using InSb interfacial layers, measured using a cross-sectional electron beam induced current (EBIC) technique to obtain minority carrier diffusion characteristics. We detail a modified EBIC model that accounts for the long absorber regions in photodetectors and fit the experimental data. We find a significant increase in the minority hole lifetime (up to 157 ns) and increased minority electron lifetime due to the interfacial layers. Additionally, electrical characterization of the device temperature-dependent resistance-area product reveals that the interfacial treatment improves the device dark current at lower temperatures.

Original language	English (US)
Article number	141107
Journal	Applied Physics Letters
Volume	102
Issue number	14
DOIs	https://doi.org/10.1063/1.4801764
State	Published - Apr 8 2013
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.4801764

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title = "Direct observation of minority carrier lifetime improvement in InAs/GaSb type-II superlattice photodiodes via interfacial layer control",

abstract = "We present improved performance in strain-balanced InAs/GaSb type-II superlattice photodetectors grown using InSb interfacial layers, measured using a cross-sectional electron beam induced current (EBIC) technique to obtain minority carrier diffusion characteristics. We detail a modified EBIC model that accounts for the long absorber regions in photodetectors and fit the experimental data. We find a significant increase in the minority hole lifetime (up to 157 ns) and increased minority electron lifetime due to the interfacial layers. Additionally, electrical characterization of the device temperature-dependent resistance-area product reveals that the interfacial treatment improves the device dark current at lower temperatures.",

author = "Daniel Zuo and Pengfei Qiao and Daniel Wasserman and {Lien Chuang}, Shun",

note = "Funding Information: The authors wish to thank Dr. James Mabon of the Frederick Seitz Materials Research Laboratory, University of Illinois at Urbana-Champaign, for his assistance with the setup of EBIC measurements. Additionally, we would like to acknowledge support from the U.S. Army Research Office Multidisciplinary Research Initiative program, under Grant No. W911NF-10-1-0524. Copyright: Copyright 2013 Elsevier B.V., All rights reserved.",

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AU - Lien Chuang, Shun

N1 - Funding Information: The authors wish to thank Dr. James Mabon of the Frederick Seitz Materials Research Laboratory, University of Illinois at Urbana-Champaign, for his assistance with the setup of EBIC measurements. Additionally, we would like to acknowledge support from the U.S. Army Research Office Multidisciplinary Research Initiative program, under Grant No. W911NF-10-1-0524. Copyright: Copyright 2013 Elsevier B.V., All rights reserved.

PY - 2013/4/8

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N2 - We present improved performance in strain-balanced InAs/GaSb type-II superlattice photodetectors grown using InSb interfacial layers, measured using a cross-sectional electron beam induced current (EBIC) technique to obtain minority carrier diffusion characteristics. We detail a modified EBIC model that accounts for the long absorber regions in photodetectors and fit the experimental data. We find a significant increase in the minority hole lifetime (up to 157 ns) and increased minority electron lifetime due to the interfacial layers. Additionally, electrical characterization of the device temperature-dependent resistance-area product reveals that the interfacial treatment improves the device dark current at lower temperatures.

AB - We present improved performance in strain-balanced InAs/GaSb type-II superlattice photodetectors grown using InSb interfacial layers, measured using a cross-sectional electron beam induced current (EBIC) technique to obtain minority carrier diffusion characteristics. We detail a modified EBIC model that accounts for the long absorber regions in photodetectors and fit the experimental data. We find a significant increase in the minority hole lifetime (up to 157 ns) and increased minority electron lifetime due to the interfacial layers. Additionally, electrical characterization of the device temperature-dependent resistance-area product reveals that the interfacial treatment improves the device dark current at lower temperatures.

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Direct observation of minority carrier lifetime improvement in InAs/GaSb type-II superlattice photodiodes via interfacial layer control

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