Direct Observation of Dopants Distribution and Diffusion in GaAs Planar Nanowires with Atom Probe Tomography

Jiangtao Qu, Wonsik Choi, Parsian Katal Mohseni, Xiuling Li, Yingjie Zhang, Hansheng Chen, Simon Ringer, Rongkun Zheng

Research output: Contribution to journalArticle

Abstract

Intentional and unintentional doping in semiconductor nanowires undoubtedly have significant impact on the device performance. However, spatially resolved precise determination of dopant concentration is challenging due to insufficient sensitivity and resolution of conventional techniques. In this paper, quantitative 3D distribution of Si and Zn dopants in planar GaAs nanowires and their interface with AlGaAs film underneath are obtained by using a unique atom probe tomography technique, providing critical insights for the growth and potential applications of these nanowires.

Original languageEnglish (US)
Pages (from-to)26244-26250
Number of pages7
JournalACS Applied Materials and Interfaces
Volume8
Issue number39
DOIs
StatePublished - Oct 5 2016

Fingerprint

Nanowires
Tomography
Doping (additives)
Atoms
Semiconductor materials
gallium arsenide

Keywords

  • APT
  • FIB
  • NWs
  • doping
  • planar GaAs nanowires
  • tomography

ASJC Scopus subject areas

  • Materials Science(all)

Cite this

Direct Observation of Dopants Distribution and Diffusion in GaAs Planar Nanowires with Atom Probe Tomography. / Qu, Jiangtao; Choi, Wonsik; Katal Mohseni, Parsian; Li, Xiuling; Zhang, Yingjie; Chen, Hansheng; Ringer, Simon; Zheng, Rongkun.

In: ACS Applied Materials and Interfaces, Vol. 8, No. 39, 05.10.2016, p. 26244-26250.

Research output: Contribution to journalArticle

Qu, Jiangtao ; Choi, Wonsik ; Katal Mohseni, Parsian ; Li, Xiuling ; Zhang, Yingjie ; Chen, Hansheng ; Ringer, Simon ; Zheng, Rongkun. / Direct Observation of Dopants Distribution and Diffusion in GaAs Planar Nanowires with Atom Probe Tomography. In: ACS Applied Materials and Interfaces. 2016 ; Vol. 8, No. 39. pp. 26244-26250.
@article{31bade6d5f9f48859f90dd95b21d898c,
title = "Direct Observation of Dopants Distribution and Diffusion in GaAs Planar Nanowires with Atom Probe Tomography",
abstract = "Intentional and unintentional doping in semiconductor nanowires undoubtedly have significant impact on the device performance. However, spatially resolved precise determination of dopant concentration is challenging due to insufficient sensitivity and resolution of conventional techniques. In this paper, quantitative 3D distribution of Si and Zn dopants in planar GaAs nanowires and their interface with AlGaAs film underneath are obtained by using a unique atom probe tomography technique, providing critical insights for the growth and potential applications of these nanowires.",
keywords = "APT, FIB, NWs, doping, planar GaAs nanowires, tomography",
author = "Jiangtao Qu and Wonsik Choi and {Katal Mohseni}, Parsian and Xiuling Li and Yingjie Zhang and Hansheng Chen and Simon Ringer and Rongkun Zheng",
year = "2016",
month = "10",
day = "5",
doi = "10.1021/acsami.6b08919",
language = "English (US)",
volume = "8",
pages = "26244--26250",
journal = "ACS applied materials & interfaces",
issn = "1944-8244",
publisher = "American Chemical Society",
number = "39",

}

TY - JOUR

T1 - Direct Observation of Dopants Distribution and Diffusion in GaAs Planar Nanowires with Atom Probe Tomography

AU - Qu, Jiangtao

AU - Choi, Wonsik

AU - Katal Mohseni, Parsian

AU - Li, Xiuling

AU - Zhang, Yingjie

AU - Chen, Hansheng

AU - Ringer, Simon

AU - Zheng, Rongkun

PY - 2016/10/5

Y1 - 2016/10/5

N2 - Intentional and unintentional doping in semiconductor nanowires undoubtedly have significant impact on the device performance. However, spatially resolved precise determination of dopant concentration is challenging due to insufficient sensitivity and resolution of conventional techniques. In this paper, quantitative 3D distribution of Si and Zn dopants in planar GaAs nanowires and their interface with AlGaAs film underneath are obtained by using a unique atom probe tomography technique, providing critical insights for the growth and potential applications of these nanowires.

AB - Intentional and unintentional doping in semiconductor nanowires undoubtedly have significant impact on the device performance. However, spatially resolved precise determination of dopant concentration is challenging due to insufficient sensitivity and resolution of conventional techniques. In this paper, quantitative 3D distribution of Si and Zn dopants in planar GaAs nanowires and their interface with AlGaAs film underneath are obtained by using a unique atom probe tomography technique, providing critical insights for the growth and potential applications of these nanowires.

KW - APT

KW - FIB

KW - NWs

KW - doping

KW - planar GaAs nanowires

KW - tomography

UR - http://www.scopus.com/inward/record.url?scp=84990216304&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84990216304&partnerID=8YFLogxK

U2 - 10.1021/acsami.6b08919

DO - 10.1021/acsami.6b08919

M3 - Article

AN - SCOPUS:84990216304

VL - 8

SP - 26244

EP - 26250

JO - ACS applied materials & interfaces

JF - ACS applied materials & interfaces

SN - 1944-8244

IS - 39

ER -