Abstract
Intentional and unintentional doping in semiconductor nanowires undoubtedly have significant impact on the device performance. However, spatially resolved precise determination of dopant concentration is challenging due to insufficient sensitivity and resolution of conventional techniques. In this paper, quantitative 3D distribution of Si and Zn dopants in planar GaAs nanowires and their interface with AlGaAs film underneath are obtained by using a unique atom probe tomography technique, providing critical insights for the growth and potential applications of these nanowires.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 26244-26250 |
| Number of pages | 7 |
| Journal | ACS Applied Materials and Interfaces |
| Volume | 8 |
| Issue number | 39 |
| DOIs | |
| State | Published - Oct 5 2016 |
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Keywords
- APT
- FIB
- NWs
- doping
- planar GaAs nanowires
- tomography
ASJC Scopus subject areas
- Materials Science(all)
Cite this
Direct Observation of Dopants Distribution and Diffusion in GaAs Planar Nanowires with Atom Probe Tomography. / Qu, Jiangtao; Choi, Wonsik; Katal Mohseni, Parsian; Li, Xiuling; Zhang, Yingjie; Chen, Hansheng; Ringer, Simon; Zheng, Rongkun.
In: ACS Applied Materials and Interfaces, Vol. 8, No. 39, 05.10.2016, p. 26244-26250.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Direct Observation of Dopants Distribution and Diffusion in GaAs Planar Nanowires with Atom Probe Tomography
AU - Qu, Jiangtao
AU - Choi, Wonsik
AU - Katal Mohseni, Parsian
AU - Li, Xiuling
AU - Zhang, Yingjie
AU - Chen, Hansheng
AU - Ringer, Simon
AU - Zheng, Rongkun
PY - 2016/10/5
Y1 - 2016/10/5
N2 - Intentional and unintentional doping in semiconductor nanowires undoubtedly have significant impact on the device performance. However, spatially resolved precise determination of dopant concentration is challenging due to insufficient sensitivity and resolution of conventional techniques. In this paper, quantitative 3D distribution of Si and Zn dopants in planar GaAs nanowires and their interface with AlGaAs film underneath are obtained by using a unique atom probe tomography technique, providing critical insights for the growth and potential applications of these nanowires.
AB - Intentional and unintentional doping in semiconductor nanowires undoubtedly have significant impact on the device performance. However, spatially resolved precise determination of dopant concentration is challenging due to insufficient sensitivity and resolution of conventional techniques. In this paper, quantitative 3D distribution of Si and Zn dopants in planar GaAs nanowires and their interface with AlGaAs film underneath are obtained by using a unique atom probe tomography technique, providing critical insights for the growth and potential applications of these nanowires.
KW - APT
KW - FIB
KW - NWs
KW - doping
KW - planar GaAs nanowires
KW - tomography
UR - http://www.scopus.com/inward/record.url?scp=84990216304&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84990216304&partnerID=8YFLogxK
U2 - 10.1021/acsami.6b08919
DO - 10.1021/acsami.6b08919
M3 - Article
AN - SCOPUS:84990216304
VL - 8
SP - 26244
EP - 26250
JO - ACS applied materials & interfaces
JF - ACS applied materials & interfaces
SN - 1944-8244
IS - 39
ER -