Direct Observation of Dopants Distribution and Diffusion in GaAs Planar Nanowires with Atom Probe Tomography

Jiangtao Qu; Wonsik Choi; Parsian Katal Mohseni; Xiuling Li; Yingjie Zhang; Hansheng Chen; Simon Ringer; Rongkun Zheng

doi:10.1021/acsami.6b08919

Direct Observation of Dopants Distribution and Diffusion in GaAs Planar Nanowires with Atom Probe Tomography

Jiangtao Qu, Wonsik Choi, Parsian Katal Mohseni, Xiuling Li, Yingjie Zhang, Hansheng Chen, Simon Ringer, Rongkun Zheng

Research output: Contribution to journal › Article › peer-review

Abstract

Intentional and unintentional doping in semiconductor nanowires undoubtedly have significant impact on the device performance. However, spatially resolved precise determination of dopant concentration is challenging due to insufficient sensitivity and resolution of conventional techniques. In this paper, quantitative 3D distribution of Si and Zn dopants in planar GaAs nanowires and their interface with AlGaAs film underneath are obtained by using a unique atom probe tomography technique, providing critical insights for the growth and potential applications of these nanowires.

Original language	English (US)
Pages (from-to)	26244-26250
Number of pages	7
Journal	ACS Applied Materials and Interfaces
Volume	8
Issue number	39
DOIs	https://doi.org/10.1021/acsami.6b08919
State	Published - Oct 5 2016

Keywords

APT
FIB
NWs
doping
planar GaAs nanowires
tomography

ASJC Scopus subject areas

Materials Science(all)

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10.1021/acsami.6b08919

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Direct Observation of Dopants Distribution and Diffusion in GaAs Planar Nanowires with Atom Probe Tomography. / Qu, Jiangtao; Choi, Wonsik; Katal Mohseni, Parsian; Li, Xiuling; Zhang, Yingjie; Chen, Hansheng; Ringer, Simon; Zheng, Rongkun.

In: ACS Applied Materials and Interfaces, Vol. 8, No. 39, 05.10.2016, p. 26244-26250.

Research output: Contribution to journal › Article › peer-review

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title = "Direct Observation of Dopants Distribution and Diffusion in GaAs Planar Nanowires with Atom Probe Tomography",

abstract = "Intentional and unintentional doping in semiconductor nanowires undoubtedly have significant impact on the device performance. However, spatially resolved precise determination of dopant concentration is challenging due to insufficient sensitivity and resolution of conventional techniques. In this paper, quantitative 3D distribution of Si and Zn dopants in planar GaAs nanowires and their interface with AlGaAs film underneath are obtained by using a unique atom probe tomography technique, providing critical insights for the growth and potential applications of these nanowires.",

keywords = "APT, FIB, NWs, doping, planar GaAs nanowires, tomography",

author = "Jiangtao Qu and Wonsik Choi and {Katal Mohseni}, Parsian and Xiuling Li and Yingjie Zhang and Hansheng Chen and Simon Ringer and Rongkun Zheng",

note = "Funding Information: We acknowledge the facilities and technical assistances from the Australian Institute of Nuclear Science and Engineering, Australian Nuclear Science and Technology Organisation, and the Australian Microscopy and Microanalysis Research Facility at the University of Sydney. X.L. acknowledges the support from the U.S. National Science Foundation DMR Grant No. 15-08140. Publisher Copyright: {\textcopyright} 2016 American Chemical Society.",

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doi = "10.1021/acsami.6b08919",

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AU - Qu, Jiangtao

AU - Choi, Wonsik

AU - Katal Mohseni, Parsian

AU - Li, Xiuling

AU - Zhang, Yingjie

AU - Chen, Hansheng

AU - Ringer, Simon

AU - Zheng, Rongkun

N1 - Funding Information: We acknowledge the facilities and technical assistances from the Australian Institute of Nuclear Science and Engineering, Australian Nuclear Science and Technology Organisation, and the Australian Microscopy and Microanalysis Research Facility at the University of Sydney. X.L. acknowledges the support from the U.S. National Science Foundation DMR Grant No. 15-08140. Publisher Copyright: © 2016 American Chemical Society.

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N2 - Intentional and unintentional doping in semiconductor nanowires undoubtedly have significant impact on the device performance. However, spatially resolved precise determination of dopant concentration is challenging due to insufficient sensitivity and resolution of conventional techniques. In this paper, quantitative 3D distribution of Si and Zn dopants in planar GaAs nanowires and their interface with AlGaAs film underneath are obtained by using a unique atom probe tomography technique, providing critical insights for the growth and potential applications of these nanowires.

AB - Intentional and unintentional doping in semiconductor nanowires undoubtedly have significant impact on the device performance. However, spatially resolved precise determination of dopant concentration is challenging due to insufficient sensitivity and resolution of conventional techniques. In this paper, quantitative 3D distribution of Si and Zn dopants in planar GaAs nanowires and their interface with AlGaAs film underneath are obtained by using a unique atom probe tomography technique, providing critical insights for the growth and potential applications of these nanowires.

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Direct Observation of Dopants Distribution and Diffusion in GaAs Planar Nanowires with Atom Probe Tomography

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Keywords

ASJC Scopus subject areas

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