Direct minority carrier transport characterization of InAs/InAsSb superlattice nBn photodetectors

Daniel Zuo, Runyu Liu, Daniel Wasserman, James Mabon, Zhao Yu He, Shi Liu, Yong Hang Zhang, Emil A. Kadlec, Benjamin V. Olson, Eric A. Shaner

Research output: Contribution to journalArticlepeer-review

Abstract

We present an extensive characterization of the minority carrier transport properties in an nBn mid-wave infrared detector incorporating a Ga-free InAs/InAsSb type-II superlattice as the absorbing region. Using a modified electron beam induced current technique in conjunction with time-resolved photoluminescence, we were able to determine several important transport parameters of the absorber region in the device, which uses a barrier layer to reduce dark current. For a device at liquid He temperatures, we report a minority carrier diffusion length of 750 nm and a minority carrier lifetime of 200 ns, with a vertical diffusivity of 3 × 10-2 cm2/s. We also report on the device's optical response characteristics at 78 K.

Original languageEnglish (US)
Article number071107
JournalApplied Physics Letters
Volume106
Issue number7
DOIs
StatePublished - Feb 16 2015

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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