Direct measurement of the thickness-dependent electronic band structure of MoS2 using angle-resolved photoemission spectroscopy

Wencan Jin, Po Chun Yeh, Nader Zaki, Datong Zhang, Jerzy T. Sadowski, Abdullah Al-Mahboob, Arend M. Van Der Zande, Daniel A. Chenet, Jerry I. Dadap, Irving P. Herman, Peter Sutter, James Hone, Richard M. Osgood

Research output: Contribution to journalArticle

Abstract

We report on the evolution of the thickness-dependent electronic band structure of the two-dimensional layered-dichalcogenide molybdenum disulfide (MoS2). Micrometer-scale angle-resolved photoemission spectroscopy of mechanically exfoliated and chemical-vapor-deposition-grown crystals provides direct evidence for the shifting of the valence band maximum from Γ̄ to K̄, for the case of MoS2 having more than one layer, to the case of single-layer MoS2, as predicted by density functional theory. This evolution of the electronic structure from bulk to few-layer to monolayer MoS2 had earlier been predicted to arise from quantum confinement. Furthermore, one of the consequences of this progression in the electronic structure is the dramatic increase in the hole effective mass, in going from bulk to monolayer MoS2 at its Brillouin zone center, which is known as the cause for the decreased carrier mobility of the monolayer form compared to that of bulk MoS2.

Original languageEnglish (US)
Article number106801
JournalPhysical review letters
Volume111
Issue number10
DOIs
StatePublished - Sep 3 2013

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photoelectric emission
electronics
spectroscopy
electronic structure
molybdenum disulfides
carrier mobility
Brillouin zones
progressions
micrometers
vapor deposition
density functional theory
valence
causes
crystals

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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Direct measurement of the thickness-dependent electronic band structure of MoS2 using angle-resolved photoemission spectroscopy. / Jin, Wencan; Yeh, Po Chun; Zaki, Nader; Zhang, Datong; Sadowski, Jerzy T.; Al-Mahboob, Abdullah; Van Der Zande, Arend M.; Chenet, Daniel A.; Dadap, Jerry I.; Herman, Irving P.; Sutter, Peter; Hone, James; Osgood, Richard M.

In: Physical review letters, Vol. 111, No. 10, 106801, 03.09.2013.

Research output: Contribution to journalArticle

Jin, W, Yeh, PC, Zaki, N, Zhang, D, Sadowski, JT, Al-Mahboob, A, Van Der Zande, AM, Chenet, DA, Dadap, JI, Herman, IP, Sutter, P, Hone, J & Osgood, RM 2013, 'Direct measurement of the thickness-dependent electronic band structure of MoS2 using angle-resolved photoemission spectroscopy', Physical review letters, vol. 111, no. 10, 106801. https://doi.org/10.1103/PhysRevLett.111.106801
Jin, Wencan ; Yeh, Po Chun ; Zaki, Nader ; Zhang, Datong ; Sadowski, Jerzy T. ; Al-Mahboob, Abdullah ; Van Der Zande, Arend M. ; Chenet, Daniel A. ; Dadap, Jerry I. ; Herman, Irving P. ; Sutter, Peter ; Hone, James ; Osgood, Richard M. / Direct measurement of the thickness-dependent electronic band structure of MoS2 using angle-resolved photoemission spectroscopy. In: Physical review letters. 2013 ; Vol. 111, No. 10.
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