Direct lifetime measurements and interactions of charged defect states in submicron Josephson junctions

R. T. Wakai, D. J. Van Harlingen

Research output: Contribution to journalArticlepeer-review

Abstract

We have measured the emission and capture time of individual electron traps residing within the tunneling barrier of very small-area (<0.05 <>m2) Josephson junctions. The voltage-bias dependence of the times is consistent with a simple nonequilibrium model in which the bias enhances the rate for electrons to tunnel into the trap from one side of the barrier and exit out the other. Some junctions show clear evidence of interactions between traps, and for certain bias conditions the noise displays predominantly series kinetics.

Original languageEnglish (US)
Pages (from-to)1687-1690
Number of pages4
JournalPhysical review letters
Volume58
Issue number16
DOIs
StatePublished - Jan 1 1987

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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