Direct laser writing of air-stable p-n junctions in graphene

Byung Hwa Seo, Jongmin Youn, Moonsub Shim

Research output: Contribution to journalArticlepeer-review


Photo-oxidation of spin-cast films of 6,13-bis(triisopropylsilylethynyl) pentacene has been exploited to develop a novel means of spatially modulating doping in graphene. The degree of n-doping of initially p-type graphene can be varied by laser irradiation time or intensity with carrier density change up to ∼7 × 1012 cm-2. This n-doping approach is demonstrated as an effective means of creating p-n junctions in graphene. The ability to direct-write arbitrary shapes and patterns of n-doped regions in graphene simply by scanning a laser source should facilitate the exploitation of p-n junctions for a variety of electronic and optoelectronic device applications.

Original languageEnglish (US)
Pages (from-to)8831-8836
Number of pages6
JournalACS Nano
Issue number9
StatePublished - Sep 23 2014


  • CVD graphene
  • TIPS-pentacene
  • direct laser writing
  • n-type doping
  • p-n junction
  • photocurrent

ASJC Scopus subject areas

  • Materials Science(all)
  • Engineering(all)
  • Physics and Astronomy(all)

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