Abstract
We have used ultrahigh vacuum scanning tunneling microscopy (UHV STM) to study single-walled carbon nanotubes (SWNTs) supported by a hydrogen-terminated Si(100)-2×1 surface. Two distinct methods were used in the deposition of SWNTs. The first is an ex situ solution-based scheme, while the second involves direct mechanical transfer in situ. The UHV-prepared Si(100)-2×1:H surface is highly robust to ambient exposure, resulting in minimal surface degradation associated with ex situ chemical processing. We have achieved simultaneous atomic resolution STM images of SWNTs and the nearby silicon substrate. Local electronic characterization was performed using scanning tunneling spectroscopy (STS). I-V spectra depict a shift in the Fermi energy of semiconducting SWNTs towards the valence band edge, consistent with charge transfer between the nanotube and the silicon substrate. A metallic SWNT shows an approximately linear I-V response at low bias, while the surrounding Si(100)-2×1:H substrate shows a ∼1.3 eV gap. An advanced understanding of the fundamental physical and electronic interactions between carbon nanotubes and silicon will further the development of hybrid nanoscale devices and circuits.
| Original language | English (US) |
|---|---|
| Title of host publication | 2003 3rd IEEE Conference on Nanotechnology, IEEE-NANO 2003 - Proceedings |
| Publisher | IEEE Computer Society |
| Pages | 327-330 |
| Number of pages | 4 |
| ISBN (Electronic) | 0780379764 |
| DOIs | |
| State | Published - Jan 1 2003 |
| Event | 2003 3rd IEEE Conference on Nanotechnology, IEEE-NANO 2003 - San Francisco, United States Duration: Aug 12 2003 → Aug 14 2003 |
Publication series
| Name | Proceedings of the IEEE Conference on Nanotechnology |
|---|---|
| Volume | 1 |
| ISSN (Print) | 1944-9399 |
| ISSN (Electronic) | 1944-9380 |
Other
| Other | 2003 3rd IEEE Conference on Nanotechnology, IEEE-NANO 2003 |
|---|---|
| Country | United States |
| City | San Francisco |
| Period | 8/12/03 → 8/14/03 |
Fingerprint
Keywords
- Atomic layer deposition
- Carbon nanotubes
- Chemical processes
- Degradation
- Energy resolution
- Microscopy
- Robustness
- Silicon
- Substrates
- Tunneling
ASJC Scopus subject areas
- Bioengineering
- Electrical and Electronic Engineering
- Materials Chemistry
- Condensed Matter Physics
Cite this
Direct integration of single-walled carbon nanotubes with silicon. / Albrecht, P. M.; Farrell, R. M.; Ye, W.; Lyding, Joseph W.
2003 3rd IEEE Conference on Nanotechnology, IEEE-NANO 2003 - Proceedings. IEEE Computer Society, 2003. p. 327-330 1231784 (Proceedings of the IEEE Conference on Nanotechnology; Vol. 1).Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - Direct integration of single-walled carbon nanotubes with silicon
AU - Albrecht, P. M.
AU - Farrell, R. M.
AU - Ye, W.
AU - Lyding, Joseph W
PY - 2003/1/1
Y1 - 2003/1/1
N2 - We have used ultrahigh vacuum scanning tunneling microscopy (UHV STM) to study single-walled carbon nanotubes (SWNTs) supported by a hydrogen-terminated Si(100)-2×1 surface. Two distinct methods were used in the deposition of SWNTs. The first is an ex situ solution-based scheme, while the second involves direct mechanical transfer in situ. The UHV-prepared Si(100)-2×1:H surface is highly robust to ambient exposure, resulting in minimal surface degradation associated with ex situ chemical processing. We have achieved simultaneous atomic resolution STM images of SWNTs and the nearby silicon substrate. Local electronic characterization was performed using scanning tunneling spectroscopy (STS). I-V spectra depict a shift in the Fermi energy of semiconducting SWNTs towards the valence band edge, consistent with charge transfer between the nanotube and the silicon substrate. A metallic SWNT shows an approximately linear I-V response at low bias, while the surrounding Si(100)-2×1:H substrate shows a ∼1.3 eV gap. An advanced understanding of the fundamental physical and electronic interactions between carbon nanotubes and silicon will further the development of hybrid nanoscale devices and circuits.
AB - We have used ultrahigh vacuum scanning tunneling microscopy (UHV STM) to study single-walled carbon nanotubes (SWNTs) supported by a hydrogen-terminated Si(100)-2×1 surface. Two distinct methods were used in the deposition of SWNTs. The first is an ex situ solution-based scheme, while the second involves direct mechanical transfer in situ. The UHV-prepared Si(100)-2×1:H surface is highly robust to ambient exposure, resulting in minimal surface degradation associated with ex situ chemical processing. We have achieved simultaneous atomic resolution STM images of SWNTs and the nearby silicon substrate. Local electronic characterization was performed using scanning tunneling spectroscopy (STS). I-V spectra depict a shift in the Fermi energy of semiconducting SWNTs towards the valence band edge, consistent with charge transfer between the nanotube and the silicon substrate. A metallic SWNT shows an approximately linear I-V response at low bias, while the surrounding Si(100)-2×1:H substrate shows a ∼1.3 eV gap. An advanced understanding of the fundamental physical and electronic interactions between carbon nanotubes and silicon will further the development of hybrid nanoscale devices and circuits.
KW - Atomic layer deposition
KW - Carbon nanotubes
KW - Chemical processes
KW - Degradation
KW - Energy resolution
KW - Microscopy
KW - Robustness
KW - Silicon
KW - Substrates
KW - Tunneling
UR - http://www.scopus.com/inward/record.url?scp=4944220518&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=4944220518&partnerID=8YFLogxK
U2 - 10.1109/NANO.2003.1231784
DO - 10.1109/NANO.2003.1231784
M3 - Conference contribution
T3 - Proceedings of the IEEE Conference on Nanotechnology
SP - 327
EP - 330
BT - 2003 3rd IEEE Conference on Nanotechnology, IEEE-NANO 2003 - Proceedings
PB - IEEE Computer Society
ER -