Direct heterointegration of III-V materials on group IV substrates

D. A. Ahmari, B. M. McDermott, S. G. Thomas, B. J. Roof, Q. J. Hartmann, X. Li

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

This work describes using metal-organic chemical vapor deposition (MOCVD) to directly deposit III-V materials on Si/Ge-based substrates, with the primary focus being the methodology used to develop a manufacturable heterointegration process.

Original languageEnglish (US)
Title of host publicationSiGe, Ge, and Related Compounds 4
Subtitle of host publicationMaterials, Processing, and Devices
Pages849-857
Number of pages9
Edition6
DOIs
StatePublished - Dec 1 2010
Event4th SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 218th ECS Meeting - Las Vegas, NV, United States
Duration: Oct 10 2010Oct 15 2010

Publication series

NameECS Transactions
Number6
Volume33
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

Other4th SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 218th ECS Meeting
CountryUnited States
CityLas Vegas, NV
Period10/10/1010/15/10

Fingerprint

Organic chemicals
Chemical vapor deposition
Deposits
Substrates
Metals

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Ahmari, D. A., McDermott, B. M., Thomas, S. G., Roof, B. J., Hartmann, Q. J., & Li, X. (2010). Direct heterointegration of III-V materials on group IV substrates. In SiGe, Ge, and Related Compounds 4: Materials, Processing, and Devices (6 ed., pp. 849-857). (ECS Transactions; Vol. 33, No. 6). https://doi.org/10.1149/1.3487615

Direct heterointegration of III-V materials on group IV substrates. / Ahmari, D. A.; McDermott, B. M.; Thomas, S. G.; Roof, B. J.; Hartmann, Q. J.; Li, X.

SiGe, Ge, and Related Compounds 4: Materials, Processing, and Devices. 6. ed. 2010. p. 849-857 (ECS Transactions; Vol. 33, No. 6).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Ahmari, DA, McDermott, BM, Thomas, SG, Roof, BJ, Hartmann, QJ & Li, X 2010, Direct heterointegration of III-V materials on group IV substrates. in SiGe, Ge, and Related Compounds 4: Materials, Processing, and Devices. 6 edn, ECS Transactions, no. 6, vol. 33, pp. 849-857, 4th SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 218th ECS Meeting, Las Vegas, NV, United States, 10/10/10. https://doi.org/10.1149/1.3487615
Ahmari DA, McDermott BM, Thomas SG, Roof BJ, Hartmann QJ, Li X. Direct heterointegration of III-V materials on group IV substrates. In SiGe, Ge, and Related Compounds 4: Materials, Processing, and Devices. 6 ed. 2010. p. 849-857. (ECS Transactions; 6). https://doi.org/10.1149/1.3487615
Ahmari, D. A. ; McDermott, B. M. ; Thomas, S. G. ; Roof, B. J. ; Hartmann, Q. J. ; Li, X. / Direct heterointegration of III-V materials on group IV substrates. SiGe, Ge, and Related Compounds 4: Materials, Processing, and Devices. 6. ed. 2010. pp. 849-857 (ECS Transactions; 6).
@inproceedings{1f28badce4374837b9a69b9d4605511c,
title = "Direct heterointegration of III-V materials on group IV substrates",
abstract = "This work describes using metal-organic chemical vapor deposition (MOCVD) to directly deposit III-V materials on Si/Ge-based substrates, with the primary focus being the methodology used to develop a manufacturable heterointegration process.",
author = "Ahmari, {D. A.} and McDermott, {B. M.} and Thomas, {S. G.} and Roof, {B. J.} and Hartmann, {Q. J.} and X. Li",
year = "2010",
month = "12",
day = "1",
doi = "10.1149/1.3487615",
language = "English (US)",
isbn = "9781566778251",
series = "ECS Transactions",
number = "6",
pages = "849--857",
booktitle = "SiGe, Ge, and Related Compounds 4",
edition = "6",

}

TY - GEN

T1 - Direct heterointegration of III-V materials on group IV substrates

AU - Ahmari, D. A.

AU - McDermott, B. M.

AU - Thomas, S. G.

AU - Roof, B. J.

AU - Hartmann, Q. J.

AU - Li, X.

PY - 2010/12/1

Y1 - 2010/12/1

N2 - This work describes using metal-organic chemical vapor deposition (MOCVD) to directly deposit III-V materials on Si/Ge-based substrates, with the primary focus being the methodology used to develop a manufacturable heterointegration process.

AB - This work describes using metal-organic chemical vapor deposition (MOCVD) to directly deposit III-V materials on Si/Ge-based substrates, with the primary focus being the methodology used to develop a manufacturable heterointegration process.

UR - http://www.scopus.com/inward/record.url?scp=79952660514&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=79952660514&partnerID=8YFLogxK

U2 - 10.1149/1.3487615

DO - 10.1149/1.3487615

M3 - Conference contribution

AN - SCOPUS:79952660514

SN - 9781566778251

T3 - ECS Transactions

SP - 849

EP - 857

BT - SiGe, Ge, and Related Compounds 4

ER -