Direct heterointegration of III-V materials on group IV substrates

D. A. Ahmari, B. M. McDermott, S. G. Thomas, B. J. Roof, Q. J. Hartmann, X. Li

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

This work describes using metal-organic chemical vapor deposition (MOCVD) to directly deposit III-V materials on Si/Ge-based substrates, with the primary focus being the methodology used to develop a manufacturable heterointegration process.

Original languageEnglish (US)
Title of host publicationSiGe, Ge, and Related Compounds 4
Subtitle of host publicationMaterials, Processing, and Devices
Pages849-857
Number of pages9
Edition6
DOIs
StatePublished - Dec 1 2010
Event4th SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 218th ECS Meeting - Las Vegas, NV, United States
Duration: Oct 10 2010Oct 15 2010

Publication series

NameECS Transactions
Number6
Volume33
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

Other4th SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 218th ECS Meeting
CountryUnited States
CityLas Vegas, NV
Period10/10/1010/15/10

ASJC Scopus subject areas

  • Engineering(all)

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  • Cite this

    Ahmari, D. A., McDermott, B. M., Thomas, S. G., Roof, B. J., Hartmann, Q. J., & Li, X. (2010). Direct heterointegration of III-V materials on group IV substrates. In SiGe, Ge, and Related Compounds 4: Materials, Processing, and Devices (6 ed., pp. 849-857). (ECS Transactions; Vol. 33, No. 6). https://doi.org/10.1149/1.3487615