@inproceedings{1f28badce4374837b9a69b9d4605511c,
title = "Direct heterointegration of III-V materials on group IV substrates",
abstract = "This work describes using metal-organic chemical vapor deposition (MOCVD) to directly deposit III-V materials on Si/Ge-based substrates, with the primary focus being the methodology used to develop a manufacturable heterointegration process.",
author = "Ahmari, {D. A.} and McDermott, {B. M.} and Thomas, {S. G.} and Roof, {B. J.} and Hartmann, {Q. J.} and X. Li",
year = "2010",
doi = "10.1149/1.3487615",
language = "English (US)",
isbn = "9781566778251",
series = "ECS Transactions",
publisher = "Electrochemical Society Inc.",
number = "6",
pages = "849--857",
booktitle = "SiGe, Ge, and Related Compounds 4",
edition = "6",
}