Direct-gap 2.1-2.2 eV AlInP solar cells on GaInAs/GaAs metamorphic buffers

Michelle Vaisman, Kunal Mukherjee, Taizo Masuda, Kevin Nay Yaung, Eugene A. Fitzgerald, Minjoo Larry Lee

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

AlInP offers the highest direct bandgap (Eg) among non-nitride III-V materials, making it attractive for top cell applications in 5-6 junction solar cells. We present novel 2.07-2.19 eV, direct-gap AlInP solar cells, grown on GaInAs/GaAs graded buffers by metal-organic chemical vapor deposition. Despite the high Al content of 36-39% in the active regions, SIMS results indicate oxygen concentrations less than 2.3×1016 cm-3. The AlInP devices we present here exhibit superior photovoltaic performance to GaP and are comparable to metamorphic GaInP solar cells, reaching a Eg-voltage offset of 0.58 V. Design enhancements based on device and material characterization led to improvements of up to 65% in short circuit current density from our first-generation AlInP devices. The promising results in this work provide an alternative path towards realizing high-Eg top junctions with applications in upright metamorphic multijunction solar cells.

Original languageEnglish (US)
Title of host publication2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781479979448
DOIs
StatePublished - Dec 14 2015
Externally publishedYes
Event42nd IEEE Photovoltaic Specialist Conference, PVSC 2015 - New Orleans, United States
Duration: Jun 14 2015Jun 19 2015

Publication series

Name2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015

Other

Other42nd IEEE Photovoltaic Specialist Conference, PVSC 2015
CountryUnited States
CityNew Orleans
Period6/14/156/19/15

Keywords

  • AlInP
  • photovoltaic cells
  • wide bandgap

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

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    Vaisman, M., Mukherjee, K., Masuda, T., Yaung, K. N., Fitzgerald, E. A., & Lee, M. L. (2015). Direct-gap 2.1-2.2 eV AlInP solar cells on GaInAs/GaAs metamorphic buffers. In 2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015 [7356435] (2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC.2015.7356435