@inproceedings{766746529a3b40d190452fbc051b7d1d,
title = "Direct-gap 2.1-2.2 eV AlInP solar cells on GaInAs/GaAs metamorphic buffers",
abstract = "AlInP offers the highest direct bandgap (Eg) among non-nitride III-V materials, making it attractive for top cell applications in 5-6 junction solar cells. We present novel 2.07-2.19 eV, direct-gap AlInP solar cells, grown on GaInAs/GaAs graded buffers by metal-organic chemical vapor deposition. Despite the high Al content of 36-39% in the active regions, SIMS results indicate oxygen concentrations less than 2.3×1016 cm-3. The AlInP devices we present here exhibit superior photovoltaic performance to GaP and are comparable to metamorphic GaInP solar cells, reaching a Eg-voltage offset of 0.58 V. Design enhancements based on device and material characterization led to improvements of up to 65% in short circuit current density from our first-generation AlInP devices. The promising results in this work provide an alternative path towards realizing high-Eg top junctions with applications in upright metamorphic multijunction solar cells.",
keywords = "AlInP, photovoltaic cells, wide bandgap",
author = "Michelle Vaisman and Kunal Mukherjee and Taizo Masuda and Yaung, {Kevin Nay} and Fitzgerald, {Eugene A.} and Lee, {Minjoo Larry}",
note = "Publisher Copyright: {\textcopyright} 2015 IEEE.; 42nd IEEE Photovoltaic Specialist Conference, PVSC 2015 ; Conference date: 14-06-2015 Through 19-06-2015",
year = "2015",
month = dec,
day = "14",
doi = "10.1109/PVSC.2015.7356435",
language = "English (US)",
series = "2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015",
address = "United States",
}