Direct current field adjustable ferroelectric behaviour in (Pb, Nb) (Zr, Sn, Ti)O3 antiferroelectric thin films

Jiwei Zhai; Haydn Chen; Eugene V. Colla; T. B. Wu

doi:10.1088/0953-8984/15/6/323

Direct current field adjustable ferroelectric behaviour in (Pb, Nb) (Zr, Sn, Ti)O₃ antiferroelectric thin films

Jiwei Zhai, Haydn Chen, Eugene V. Colla, T. B. Wu

Research output: Contribution to journal › Article › peer-review

Abstract

(Pb, Nb) (Zr, Sn, Ti)O₃ antiferroelectric (AFE) thin films have been fabricated on LaNiO₃/Pt/Ti/SiO₂/Si wafers using a sol-gel process. The electric field-induced antiferroelectric-to-ferroelectric (AFE-FE) phase transformation behaviour and its dependence on the temperature were examined by investigating the dielectric constant and dielectric loss versus temperature and electrical field. The AFE-FE phase transformation temperature can be adjusted as a function of the DC bias field and the thickness of the thin film. With increasing DC bias field, the FE phase region was enlarged, the AFE-FE transformation temperatures shifted to lower temperature, and the ferroelectric-to-paraelectric transformation temperature shifted to higher temperature. With increasing film thickness, the modulation effect of the DC bias field on the AFE-FE phase transformation temperature is increased.

Original language	English (US)
Pages (from-to)	963-969
Number of pages	7
Journal	Journal of Physics Condensed Matter
Volume	15
Issue number	6
DOIs	https://doi.org/10.1088/0953-8984/15/6/323
State	Published - Feb 19 2003
Externally published	Yes

ASJC Scopus subject areas

General Materials Science
Condensed Matter Physics

Online availability

10.1088/0953-8984/15/6/323

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Cite this

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title = "Direct current field adjustable ferroelectric behaviour in (Pb, Nb) (Zr, Sn, Ti)O3 antiferroelectric thin films",

abstract = "(Pb, Nb) (Zr, Sn, Ti)O3 antiferroelectric (AFE) thin films have been fabricated on LaNiO3/Pt/Ti/SiO2/Si wafers using a sol-gel process. The electric field-induced antiferroelectric-to-ferroelectric (AFE-FE) phase transformation behaviour and its dependence on the temperature were examined by investigating the dielectric constant and dielectric loss versus temperature and electrical field. The AFE-FE phase transformation temperature can be adjusted as a function of the DC bias field and the thickness of the thin film. With increasing DC bias field, the FE phase region was enlarged, the AFE-FE transformation temperatures shifted to lower temperature, and the ferroelectric-to-paraelectric transformation temperature shifted to higher temperature. With increasing film thickness, the modulation effect of the DC bias field on the AFE-FE phase transformation temperature is increased.",

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T1 - Direct current field adjustable ferroelectric behaviour in (Pb, Nb) (Zr, Sn, Ti)O3 antiferroelectric thin films

AU - Zhai, Jiwei

AU - Chen, Haydn

AU - Colla, Eugene V.

AU - Wu, T. B.

PY - 2003/2/19

Y1 - 2003/2/19

N2 - (Pb, Nb) (Zr, Sn, Ti)O3 antiferroelectric (AFE) thin films have been fabricated on LaNiO3/Pt/Ti/SiO2/Si wafers using a sol-gel process. The electric field-induced antiferroelectric-to-ferroelectric (AFE-FE) phase transformation behaviour and its dependence on the temperature were examined by investigating the dielectric constant and dielectric loss versus temperature and electrical field. The AFE-FE phase transformation temperature can be adjusted as a function of the DC bias field and the thickness of the thin film. With increasing DC bias field, the FE phase region was enlarged, the AFE-FE transformation temperatures shifted to lower temperature, and the ferroelectric-to-paraelectric transformation temperature shifted to higher temperature. With increasing film thickness, the modulation effect of the DC bias field on the AFE-FE phase transformation temperature is increased.

AB - (Pb, Nb) (Zr, Sn, Ti)O3 antiferroelectric (AFE) thin films have been fabricated on LaNiO3/Pt/Ti/SiO2/Si wafers using a sol-gel process. The electric field-induced antiferroelectric-to-ferroelectric (AFE-FE) phase transformation behaviour and its dependence on the temperature were examined by investigating the dielectric constant and dielectric loss versus temperature and electrical field. The AFE-FE phase transformation temperature can be adjusted as a function of the DC bias field and the thickness of the thin film. With increasing DC bias field, the FE phase region was enlarged, the AFE-FE transformation temperatures shifted to lower temperature, and the ferroelectric-to-paraelectric transformation temperature shifted to higher temperature. With increasing film thickness, the modulation effect of the DC bias field on the AFE-FE phase transformation temperature is increased.

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