Direct conversion semiconductor detectors for radiation imaging

Shiva Abbaszadeh, Craig S. Levin

Research output: Chapter in Book/Report/Conference proceedingChapter

Abstract

The detection and conversion of high-energy photons (such as x-ray, gamma-ray, and 511 keV annihilation photons) to electric charges can be divided into two classes: direct conversion and indirect conversion (Figure 1.1). Direct conversion detectors contain a photoconductive material, which converts high-energy photons directly into electrical charges. In contrast, indirect conversion detectors have a scintillation layer that converts the high-energy photons into optical photons. These optical photons are then converted into electrical charges using photodetectors, such as silicon photomultipliers (SiPMs). The indirect conversion detection is the most dominant technology for high-energy photon imaging due to the maturity of scintillation material and optical detection technology. Direct conversion semiconductors, especially compound semiconductors, have experienced slower development due to challenges in growth of high-purity, stable, and uniform crystals. However, there has been an ongoing interest in direct conversion for higher spatial resolution applications [1,2]. In this chapter, we discuss the key properties of photoconductive materials for high-performance direct conversion detectors for medical imaging applications. Two commercially available direct conversion photoconductors, amorphous selenium (a-Se) for large area x-ray imaging and cadmium zinc telluride (CZT) for high-resolution positron emission tomography (PET), are presented.

Original languageEnglish (US)
Title of host publicationSemiconductor Radiation Detectors
Subtitle of host publicationTechnology and Applications
PublisherCRC Press
Pages1-20
Number of pages20
ISBN (Electronic)9781351779920
ISBN (Print)9781138710344
DOIs
StatePublished - Jan 1 2017

Fingerprint

Semiconductor detectors
Photons
Imaging techniques
Radiation
Scintillation
Detectors
Semiconductor materials
Photoconducting materials
X rays
Electric charge
Positron emission tomography
Photomultipliers
Medical imaging
Selenium
Photodetectors
Gamma rays
Cadmium
Zinc
Silicon
Crystals

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Abbaszadeh, S., & Levin, C. S. (2017). Direct conversion semiconductor detectors for radiation imaging. In Semiconductor Radiation Detectors: Technology and Applications (pp. 1-20). CRC Press. https://doi.org/10.1201/9781315200729

Direct conversion semiconductor detectors for radiation imaging. / Abbaszadeh, Shiva; Levin, Craig S.

Semiconductor Radiation Detectors: Technology and Applications. CRC Press, 2017. p. 1-20.

Research output: Chapter in Book/Report/Conference proceedingChapter

Abbaszadeh, S & Levin, CS 2017, Direct conversion semiconductor detectors for radiation imaging. in Semiconductor Radiation Detectors: Technology and Applications. CRC Press, pp. 1-20. https://doi.org/10.1201/9781315200729
Abbaszadeh S, Levin CS. Direct conversion semiconductor detectors for radiation imaging. In Semiconductor Radiation Detectors: Technology and Applications. CRC Press. 2017. p. 1-20 https://doi.org/10.1201/9781315200729
Abbaszadeh, Shiva ; Levin, Craig S. / Direct conversion semiconductor detectors for radiation imaging. Semiconductor Radiation Detectors: Technology and Applications. CRC Press, 2017. pp. 1-20
@inbook{72494016f7df431380e0b0365513c4ae,
title = "Direct conversion semiconductor detectors for radiation imaging",
abstract = "The detection and conversion of high-energy photons (such as x-ray, gamma-ray, and 511 keV annihilation photons) to electric charges can be divided into two classes: direct conversion and indirect conversion (Figure 1.1). Direct conversion detectors contain a photoconductive material, which converts high-energy photons directly into electrical charges. In contrast, indirect conversion detectors have a scintillation layer that converts the high-energy photons into optical photons. These optical photons are then converted into electrical charges using photodetectors, such as silicon photomultipliers (SiPMs). The indirect conversion detection is the most dominant technology for high-energy photon imaging due to the maturity of scintillation material and optical detection technology. Direct conversion semiconductors, especially compound semiconductors, have experienced slower development due to challenges in growth of high-purity, stable, and uniform crystals. However, there has been an ongoing interest in direct conversion for higher spatial resolution applications [1,2]. In this chapter, we discuss the key properties of photoconductive materials for high-performance direct conversion detectors for medical imaging applications. Two commercially available direct conversion photoconductors, amorphous selenium (a-Se) for large area x-ray imaging and cadmium zinc telluride (CZT) for high-resolution positron emission tomography (PET), are presented.",
author = "Shiva Abbaszadeh and Levin, {Craig S.}",
year = "2017",
month = "1",
day = "1",
doi = "10.1201/9781315200729",
language = "English (US)",
isbn = "9781138710344",
pages = "1--20",
booktitle = "Semiconductor Radiation Detectors",
publisher = "CRC Press",

}

TY - CHAP

T1 - Direct conversion semiconductor detectors for radiation imaging

AU - Abbaszadeh, Shiva

AU - Levin, Craig S.

PY - 2017/1/1

Y1 - 2017/1/1

N2 - The detection and conversion of high-energy photons (such as x-ray, gamma-ray, and 511 keV annihilation photons) to electric charges can be divided into two classes: direct conversion and indirect conversion (Figure 1.1). Direct conversion detectors contain a photoconductive material, which converts high-energy photons directly into electrical charges. In contrast, indirect conversion detectors have a scintillation layer that converts the high-energy photons into optical photons. These optical photons are then converted into electrical charges using photodetectors, such as silicon photomultipliers (SiPMs). The indirect conversion detection is the most dominant technology for high-energy photon imaging due to the maturity of scintillation material and optical detection technology. Direct conversion semiconductors, especially compound semiconductors, have experienced slower development due to challenges in growth of high-purity, stable, and uniform crystals. However, there has been an ongoing interest in direct conversion for higher spatial resolution applications [1,2]. In this chapter, we discuss the key properties of photoconductive materials for high-performance direct conversion detectors for medical imaging applications. Two commercially available direct conversion photoconductors, amorphous selenium (a-Se) for large area x-ray imaging and cadmium zinc telluride (CZT) for high-resolution positron emission tomography (PET), are presented.

AB - The detection and conversion of high-energy photons (such as x-ray, gamma-ray, and 511 keV annihilation photons) to electric charges can be divided into two classes: direct conversion and indirect conversion (Figure 1.1). Direct conversion detectors contain a photoconductive material, which converts high-energy photons directly into electrical charges. In contrast, indirect conversion detectors have a scintillation layer that converts the high-energy photons into optical photons. These optical photons are then converted into electrical charges using photodetectors, such as silicon photomultipliers (SiPMs). The indirect conversion detection is the most dominant technology for high-energy photon imaging due to the maturity of scintillation material and optical detection technology. Direct conversion semiconductors, especially compound semiconductors, have experienced slower development due to challenges in growth of high-purity, stable, and uniform crystals. However, there has been an ongoing interest in direct conversion for higher spatial resolution applications [1,2]. In this chapter, we discuss the key properties of photoconductive materials for high-performance direct conversion detectors for medical imaging applications. Two commercially available direct conversion photoconductors, amorphous selenium (a-Se) for large area x-ray imaging and cadmium zinc telluride (CZT) for high-resolution positron emission tomography (PET), are presented.

UR - http://www.scopus.com/inward/record.url?scp=85051770713&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85051770713&partnerID=8YFLogxK

U2 - 10.1201/9781315200729

DO - 10.1201/9781315200729

M3 - Chapter

AN - SCOPUS:85051770713

SN - 9781138710344

SP - 1

EP - 20

BT - Semiconductor Radiation Detectors

PB - CRC Press

ER -