Direct contact mechanism of Ohmic metallization to AlGaN/GaN heterostructures via Ohmic area recess etching

Liang Wang; Dong Hyun Kim; Ilesanmi Adesida

doi:10.1063/1.3255014

Direct contact mechanism of Ohmic metallization to AlGaN/GaN heterostructures via Ohmic area recess etching

Liang Wang, Dong Hyun Kim, Ilesanmi Adesida

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Abstract

The effects of recess etching of the Ohmic contact area on the performance of Ti/Al/Mo/Au metallization and its interfacial reactions with AlGaN/AlN/GaN epilayers were investigated. The best Ohmic contact performances of 0.31, 0.41, and 0.26 Ω mm for three epilayers from two different sources were obtained only when the two-dimensional electron gas (2DEG) channels were completely removed under the Ohmic contact metallization. This is due to the direct sideway contact made by the electrode to the 2DEG around the edges of the active-layer mesas or pads; this is believed to be a more efficient carrier transport mechanism than tunneling through the AlGaN barrier.

Original language	English (US)
Article number	172107
Journal	Applied Physics Letters
Volume	95
Issue number	17
DOIs	https://doi.org/10.1063/1.3255014
State	Published - 2009
Externally published	Yes

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Physics and Astronomy (miscellaneous)

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10.1063/1.3255014

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title = "Direct contact mechanism of Ohmic metallization to AlGaN/GaN heterostructures via Ohmic area recess etching",

abstract = "The effects of recess etching of the Ohmic contact area on the performance of Ti/Al/Mo/Au metallization and its interfacial reactions with AlGaN/AlN/GaN epilayers were investigated. The best Ohmic contact performances of 0.31, 0.41, and 0.26 Ω mm for three epilayers from two different sources were obtained only when the two-dimensional electron gas (2DEG) channels were completely removed under the Ohmic contact metallization. This is due to the direct sideway contact made by the electrode to the 2DEG around the edges of the active-layer mesas or pads; this is believed to be a more efficient carrier transport mechanism than tunneling through the AlGaN barrier.",

author = "Liang Wang and Kim, {Dong Hyun} and Ilesanmi Adesida",

note = "Funding Information: This work was supported by ONR under Grant No. N000140610449 (Program Monitor: Dr. Paul Maki). TEM analyses were carried out at the Center for Microanalysis of Materials, University of Illinois, which is partially supported by U.S. Department of Energy under Grant No. DEFG02-91-ER45439. The assistance of J. G. Wen and C. H. Lei on the TEM is acknowledged. ",

year = "2009",

doi = "10.1063/1.3255014",

language = "English (US)",

volume = "95",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "17",

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T1 - Direct contact mechanism of Ohmic metallization to AlGaN/GaN heterostructures via Ohmic area recess etching

AU - Wang, Liang

AU - Kim, Dong Hyun

AU - Adesida, Ilesanmi

N1 - Funding Information: This work was supported by ONR under Grant No. N000140610449 (Program Monitor: Dr. Paul Maki). TEM analyses were carried out at the Center for Microanalysis of Materials, University of Illinois, which is partially supported by U.S. Department of Energy under Grant No. DEFG02-91-ER45439. The assistance of J. G. Wen and C. H. Lei on the TEM is acknowledged.

PY - 2009

Y1 - 2009

N2 - The effects of recess etching of the Ohmic contact area on the performance of Ti/Al/Mo/Au metallization and its interfacial reactions with AlGaN/AlN/GaN epilayers were investigated. The best Ohmic contact performances of 0.31, 0.41, and 0.26 Ω mm for three epilayers from two different sources were obtained only when the two-dimensional electron gas (2DEG) channels were completely removed under the Ohmic contact metallization. This is due to the direct sideway contact made by the electrode to the 2DEG around the edges of the active-layer mesas or pads; this is believed to be a more efficient carrier transport mechanism than tunneling through the AlGaN barrier.

AB - The effects of recess etching of the Ohmic contact area on the performance of Ti/Al/Mo/Au metallization and its interfacial reactions with AlGaN/AlN/GaN epilayers were investigated. The best Ohmic contact performances of 0.31, 0.41, and 0.26 Ω mm for three epilayers from two different sources were obtained only when the two-dimensional electron gas (2DEG) channels were completely removed under the Ohmic contact metallization. This is due to the direct sideway contact made by the electrode to the 2DEG around the edges of the active-layer mesas or pads; this is believed to be a more efficient carrier transport mechanism than tunneling through the AlGaN barrier.

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Direct contact mechanism of Ohmic metallization to AlGaN/GaN heterostructures via Ohmic area recess etching

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