Diode-triggered silicon-controlled rectifier with reduced voltage overshoot for CDM ESD protection

Wen Yi Chen, Elyse Rosenbaum, Ming Dou Ker

Research output: Contribution to journalArticle

Abstract

Diode-triggered silicon-controlled rectifiers (DTSCRs) are used for on-chip electrostatic discharge protection. The role of the trigger diode string in determining the transient voltage overshoot is investigated using a very fast transmission line pulse. A DTSCR containing only poly-bound trigger diodes has a voltage overshoot of just 1.5 V at 7 A, which is significantly less than what is found with STI-bound diodes. A DTSCR with only STI-bound trigger diodes has a lower leakage current. Therefore, DTSCRs with different trigger diode configurations may be suitable for different applications, e.g., high speed or low power.

Original languageEnglish (US)
Article number6163575
Pages (from-to)10-14
Number of pages5
JournalIEEE Transactions on Device and Materials Reliability
Volume12
Issue number1
DOIs
StatePublished - Mar 1 2012

Fingerprint

Thyristors
Diodes
Electric potential
Electrostatic discharge
Leakage currents
Electric lines

Keywords

  • Charge device model (CDM)
  • electrostatic discharge (ESD)
  • silicon-controlled rectifier (SCR)

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Safety, Risk, Reliability and Quality
  • Electrical and Electronic Engineering

Cite this

Diode-triggered silicon-controlled rectifier with reduced voltage overshoot for CDM ESD protection. / Chen, Wen Yi; Rosenbaum, Elyse; Ker, Ming Dou.

In: IEEE Transactions on Device and Materials Reliability, Vol. 12, No. 1, 6163575, 01.03.2012, p. 10-14.

Research output: Contribution to journalArticle

@article{38435a8c05054cc794b9655191840275,
title = "Diode-triggered silicon-controlled rectifier with reduced voltage overshoot for CDM ESD protection",
abstract = "Diode-triggered silicon-controlled rectifiers (DTSCRs) are used for on-chip electrostatic discharge protection. The role of the trigger diode string in determining the transient voltage overshoot is investigated using a very fast transmission line pulse. A DTSCR containing only poly-bound trigger diodes has a voltage overshoot of just 1.5 V at 7 A, which is significantly less than what is found with STI-bound diodes. A DTSCR with only STI-bound trigger diodes has a lower leakage current. Therefore, DTSCRs with different trigger diode configurations may be suitable for different applications, e.g., high speed or low power.",
keywords = "Charge device model (CDM), electrostatic discharge (ESD), silicon-controlled rectifier (SCR)",
author = "Chen, {Wen Yi} and Elyse Rosenbaum and Ker, {Ming Dou}",
year = "2012",
month = "3",
day = "1",
doi = "10.1109/TDMR.2011.2171487",
language = "English (US)",
volume = "12",
pages = "10--14",
journal = "IEEE Transactions on Device and Materials Reliability",
issn = "1530-4388",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "1",

}

TY - JOUR

T1 - Diode-triggered silicon-controlled rectifier with reduced voltage overshoot for CDM ESD protection

AU - Chen, Wen Yi

AU - Rosenbaum, Elyse

AU - Ker, Ming Dou

PY - 2012/3/1

Y1 - 2012/3/1

N2 - Diode-triggered silicon-controlled rectifiers (DTSCRs) are used for on-chip electrostatic discharge protection. The role of the trigger diode string in determining the transient voltage overshoot is investigated using a very fast transmission line pulse. A DTSCR containing only poly-bound trigger diodes has a voltage overshoot of just 1.5 V at 7 A, which is significantly less than what is found with STI-bound diodes. A DTSCR with only STI-bound trigger diodes has a lower leakage current. Therefore, DTSCRs with different trigger diode configurations may be suitable for different applications, e.g., high speed or low power.

AB - Diode-triggered silicon-controlled rectifiers (DTSCRs) are used for on-chip electrostatic discharge protection. The role of the trigger diode string in determining the transient voltage overshoot is investigated using a very fast transmission line pulse. A DTSCR containing only poly-bound trigger diodes has a voltage overshoot of just 1.5 V at 7 A, which is significantly less than what is found with STI-bound diodes. A DTSCR with only STI-bound trigger diodes has a lower leakage current. Therefore, DTSCRs with different trigger diode configurations may be suitable for different applications, e.g., high speed or low power.

KW - Charge device model (CDM)

KW - electrostatic discharge (ESD)

KW - silicon-controlled rectifier (SCR)

UR - http://www.scopus.com/inward/record.url?scp=84863235295&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84863235295&partnerID=8YFLogxK

U2 - 10.1109/TDMR.2011.2171487

DO - 10.1109/TDMR.2011.2171487

M3 - Article

AN - SCOPUS:84863235295

VL - 12

SP - 10

EP - 14

JO - IEEE Transactions on Device and Materials Reliability

JF - IEEE Transactions on Device and Materials Reliability

SN - 1530-4388

IS - 1

M1 - 6163575

ER -