Diode-triggered silicon-controlled rectifier with reduced voltage overshoot for CDM ESD protection

Wen Yi Chen; Elyse Rosenbaum; Ming Dou Ker

doi:10.1109/TDMR.2011.2171487

Diode-triggered silicon-controlled rectifier with reduced voltage overshoot for CDM ESD protection

Wen Yi Chen, Elyse Rosenbaum, Ming Dou Ker

Research output: Contribution to journal › Article › peer-review

Abstract

Diode-triggered silicon-controlled rectifiers (DTSCRs) are used for on-chip electrostatic discharge protection. The role of the trigger diode string in determining the transient voltage overshoot is investigated using a very fast transmission line pulse. A DTSCR containing only poly-bound trigger diodes has a voltage overshoot of just 1.5 V at 7 A, which is significantly less than what is found with STI-bound diodes. A DTSCR with only STI-bound trigger diodes has a lower leakage current. Therefore, DTSCRs with different trigger diode configurations may be suitable for different applications, e.g., high speed or low power.

Original language	English (US)
Article number	6163575
Pages (from-to)	10-14
Number of pages	5
Journal	IEEE Transactions on Device and Materials Reliability
Volume	12
Issue number	1
DOIs	https://doi.org/10.1109/TDMR.2011.2171487
State	Published - Mar 2012

Keywords

Charge device model (CDM)
electrostatic discharge (ESD)
silicon-controlled rectifier (SCR)

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Safety, Risk, Reliability and Quality
Electrical and Electronic Engineering

Online availability

10.1109/TDMR.2011.2171487

Library availability

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title = "Diode-triggered silicon-controlled rectifier with reduced voltage overshoot for CDM ESD protection",

abstract = "Diode-triggered silicon-controlled rectifiers (DTSCRs) are used for on-chip electrostatic discharge protection. The role of the trigger diode string in determining the transient voltage overshoot is investigated using a very fast transmission line pulse. A DTSCR containing only poly-bound trigger diodes has a voltage overshoot of just 1.5 V at 7 A, which is significantly less than what is found with STI-bound diodes. A DTSCR with only STI-bound trigger diodes has a lower leakage current. Therefore, DTSCRs with different trigger diode configurations may be suitable for different applications, e.g., high speed or low power.",

keywords = "Charge device model (CDM), electrostatic discharge (ESD), silicon-controlled rectifier (SCR)",

author = "Chen, {Wen Yi} and Elyse Rosenbaum and Ker, {Ming Dou}",

note = "Funding Information: Manuscript received July 19, 2011; revised September 7, 2011 and September 26, 2011; accepted October 1, 2011. Date of publication October 13, 2011; date of current version March 7, 2012. This work was supported in part by the National Science Council, Taiwan, under Contract NSC 98-2221-E-009-113-MY2 and in part by the “Aim for the Top University Plan” of National Chiao Tung University and the Ministry of Education, Taiwan. The work of W.-Y. Chen was supported by the Graduate Students Study Abroad Fellowship from the National Science Council, Taiwan. The work of E. Rosenbaum was supported by the SRC.",

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doi = "10.1109/TDMR.2011.2171487",

language = "English (US)",

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AU - Chen, Wen Yi

AU - Rosenbaum, Elyse

AU - Ker, Ming Dou

N1 - Funding Information: Manuscript received July 19, 2011; revised September 7, 2011 and September 26, 2011; accepted October 1, 2011. Date of publication October 13, 2011; date of current version March 7, 2012. This work was supported in part by the National Science Council, Taiwan, under Contract NSC 98-2221-E-009-113-MY2 and in part by the “Aim for the Top University Plan” of National Chiao Tung University and the Ministry of Education, Taiwan. The work of W.-Y. Chen was supported by the Graduate Students Study Abroad Fellowship from the National Science Council, Taiwan. The work of E. Rosenbaum was supported by the SRC.

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AB - Diode-triggered silicon-controlled rectifiers (DTSCRs) are used for on-chip electrostatic discharge protection. The role of the trigger diode string in determining the transient voltage overshoot is investigated using a very fast transmission line pulse. A DTSCR containing only poly-bound trigger diodes has a voltage overshoot of just 1.5 V at 7 A, which is significantly less than what is found with STI-bound diodes. A DTSCR with only STI-bound trigger diodes has a lower leakage current. Therefore, DTSCRs with different trigger diode configurations may be suitable for different applications, e.g., high speed or low power.

KW - Charge device model (CDM)

KW - electrostatic discharge (ESD)

KW - silicon-controlled rectifier (SCR)

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Diode-triggered silicon-controlled rectifier with reduced voltage overshoot for CDM ESD protection

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Keywords

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