Diode-triggered silicon-controlled rectifier with reduced voltage overshoot for CDM ESD protection

Wen Yi Chen, Elyse Rosenbaum, Ming Dou Ker

Research output: Contribution to journalArticle

Abstract

Diode-triggered silicon-controlled rectifiers (DTSCRs) are used for on-chip electrostatic discharge protection. The role of the trigger diode string in determining the transient voltage overshoot is investigated using a very fast transmission line pulse. A DTSCR containing only poly-bound trigger diodes has a voltage overshoot of just 1.5 V at 7 A, which is significantly less than what is found with STI-bound diodes. A DTSCR with only STI-bound trigger diodes has a lower leakage current. Therefore, DTSCRs with different trigger diode configurations may be suitable for different applications, e.g., high speed or low power.

Original languageEnglish (US)
Article number6163575
Pages (from-to)10-14
Number of pages5
JournalIEEE Transactions on Device and Materials Reliability
Volume12
Issue number1
DOIs
StatePublished - Mar 1 2012

Keywords

  • Charge device model (CDM)
  • electrostatic discharge (ESD)
  • silicon-controlled rectifier (SCR)

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Safety, Risk, Reliability and Quality
  • Electrical and Electronic Engineering

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