Abstract
Diode-triggered silicon-controlled rectifiers (DTSCRs) are used for on-chip electrostatic discharge protection. The role of the trigger diode string in determining the transient voltage overshoot is investigated using a very fast transmission line pulse. A DTSCR containing only poly-bound trigger diodes has a voltage overshoot of just 1.5 V at 7 A, which is significantly less than what is found with STI-bound diodes. A DTSCR with only STI-bound trigger diodes has a lower leakage current. Therefore, DTSCRs with different trigger diode configurations may be suitable for different applications, e.g., high speed or low power.
Original language | English (US) |
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Article number | 6163575 |
Pages (from-to) | 10-14 |
Number of pages | 5 |
Journal | IEEE Transactions on Device and Materials Reliability |
Volume | 12 |
Issue number | 1 |
DOIs | |
State | Published - Mar 2012 |
Keywords
- Charge device model (CDM)
- electrostatic discharge (ESD)
- silicon-controlled rectifier (SCR)
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Safety, Risk, Reliability and Quality
- Electrical and Electronic Engineering