Diode-based tuned ESD protection for 5.25-GHz CMOS LNAs

Sami Hyvonen; Elyse Rosenbaum

Diode-based tuned ESD protection for 5.25-GHz CMOS LNAs

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

CMOS diodes are evaluated in terms of figure-of-merit (I_t2/C) and quality factor. Five 5.25-GHz LNAs with ESD protection are designed and tested; all have high ESD protection levels. The LNA protected with a one-diode variant of the cancellation circuit has RF performance almost identical to that of a sixth, unprotected LNA. Copyright 2005

Original language	English (US)
Title of host publication	2005 Electrical Overstress/Electrostatic Discharge Symposium, EOS/ESD 2005
State	Published - 2005
Event	2005 Electrical Overstress/Electrostatic Discharge Symposium, EOS/ESD 2005 - Anaheim, CA, United States Duration: Sep 8 2005 → Sep 16 2005

Publication series

Name	Electrical Overstress/Electrostatic Discharge Symposium Proceedings
ISSN (Print)	0739-5159

Other

Other	2005 Electrical Overstress/Electrostatic Discharge Symposium, EOS/ESD 2005
Country/Territory	United States
City	Anaheim, CA
Period	9/8/05 → 9/16/05

ASJC Scopus subject areas

Electrical and Electronic Engineering

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title = "Diode-based tuned ESD protection for 5.25-GHz CMOS LNAs",

abstract = "CMOS diodes are evaluated in terms of figure-of-merit (It2/C) and quality factor. Five 5.25-GHz LNAs with ESD protection are designed and tested; all have high ESD protection levels. The LNA protected with a one-diode variant of the cancellation circuit has RF performance almost identical to that of a sixth, unprotected LNA. Copyright 2005",

author = "Sami Hyvonen and Elyse Rosenbaum",

year = "2005",

language = "English (US)",

isbn = "158537069X",

series = "Electrical Overstress/Electrostatic Discharge Symposium Proceedings",

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note = "2005 Electrical Overstress/Electrostatic Discharge Symposium, EOS/ESD 2005 ; Conference date: 08-09-2005 Through 16-09-2005",

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AU - Hyvonen, Sami

AU - Rosenbaum, Elyse

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AB - CMOS diodes are evaluated in terms of figure-of-merit (It2/C) and quality factor. Five 5.25-GHz LNAs with ESD protection are designed and tested; all have high ESD protection levels. The LNA protected with a one-diode variant of the cancellation circuit has RF performance almost identical to that of a sixth, unprotected LNA. Copyright 2005

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M3 - Conference contribution

AN - SCOPUS:70449730548

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SN - 9781585370696

T3 - Electrical Overstress/Electrostatic Discharge Symposium Proceedings

BT - 2005 Electrical Overstress/Electrostatic Discharge Symposium, EOS/ESD 2005

T2 - 2005 Electrical Overstress/Electrostatic Discharge Symposium, EOS/ESD 2005

Y2 - 8 September 2005 through 16 September 2005

ER -

Diode-based tuned ESD protection for 5.25-GHz CMOS LNAs

Abstract

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