Diode-based tuned ESD protection for 5.25-GHz CMOS LNAs

Sami Hyvonen, Elyse Rosenbaum

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

CMOS diodes are evaluated in terms of figure-of-merit (It2/C) and quality factor. Five 5.25-GHz LNAs with ESD protection are designed and tested; all have high ESD protection levels. The LNA protected with a one-diode variant of the cancellation circuit has RF performance almost identical to that of a sixth, unprotected LNA. Copyright 2005

Original languageEnglish (US)
Title of host publication2005 Electrical Overstress/Electrostatic Discharge Symposium, EOS/ESD 2005
StatePublished - 2005
Event2005 Electrical Overstress/Electrostatic Discharge Symposium, EOS/ESD 2005 - Anaheim, CA, United States
Duration: Sep 8 2005Sep 16 2005

Publication series

NameElectrical Overstress/Electrostatic Discharge Symposium Proceedings
ISSN (Print)0739-5159

Other

Other2005 Electrical Overstress/Electrostatic Discharge Symposium, EOS/ESD 2005
Country/TerritoryUnited States
CityAnaheim, CA
Period9/8/059/16/05

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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