TY - GEN
T1 - Diode-based tuned ESD protection for 5.25-GHz CMOS LNAs
AU - Hyvonen, Sami
AU - Rosenbaum, Elyse
PY - 2005
Y1 - 2005
N2 - CMOS diodes are evaluated in terms of figure-of-merit (It2/C) and quality factor. Five 5.25-GHz LNAs with ESD protection are designed and tested; all have high ESD protection levels. The LNA protected with a one-diode variant of the cancellation circuit has RF performance almost identical to that of a sixth, unprotected LNA. Copyright 2005
AB - CMOS diodes are evaluated in terms of figure-of-merit (It2/C) and quality factor. Five 5.25-GHz LNAs with ESD protection are designed and tested; all have high ESD protection levels. The LNA protected with a one-diode variant of the cancellation circuit has RF performance almost identical to that of a sixth, unprotected LNA. Copyright 2005
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M3 - Conference contribution
AN - SCOPUS:70449730548
SN - 158537069X
SN - 9781585370696
T3 - Electrical Overstress/Electrostatic Discharge Symposium Proceedings
BT - 2005 Electrical Overstress/Electrostatic Discharge Symposium, EOS/ESD 2005
T2 - 2005 Electrical Overstress/Electrostatic Discharge Symposium, EOS/ESD 2005
Y2 - 8 September 2005 through 16 September 2005
ER -