Dimensional crossover and weak localization in a 90 nm n -GaAs thin film

A. M. Gilbertson; A. K M Newaz; Woo Jin Chang; R. Bashir; S. A. Solin; L. F. Cohen

doi:10.1063/1.3176968

Dimensional crossover and weak localization in a 90 nm n -GaAs thin film

A. M. Gilbertson, A. K M Newaz, Woo Jin Chang, R. Bashir, S. A. Solin, L. F. Cohen

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Abstract

We report on the magnetotransport in a 90 nm thick n -type GaAs epitaxial thin film in the weak localization (WL) regime. Low temperature (T≥50 K) magnetotransport data are fit with WL theory, from which the phase coherence time, τ_φ ∝ T-p (p=1.22±0.01), are extracted. We conclude that the dominant dephasing mechanism at these temperatures is electron-electron (e-e) scattering in the Nyquist limit. Evidence of a crossover from two-dimensional to three-dimensional behavior with respect to both coherent transport (WL) and e-e interactions is observed in the temperature dependence of the zero-field conductivity and τ_φ, respectively.

Original language	English (US)
Article number	012113
Journal	Applied Physics Letters
Volume	95
Issue number	1
DOIs	https://doi.org/10.1063/1.3176968
State	Published - 2009

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Physics and Astronomy (miscellaneous)

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10.1063/1.3176968

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title = "Dimensional crossover and weak localization in a 90 nm n -GaAs thin film",

abstract = "We report on the magnetotransport in a 90 nm thick n -type GaAs epitaxial thin film in the weak localization (WL) regime. Low temperature (T≥50 K) magnetotransport data are fit with WL theory, from which the phase coherence time, τφ ∝ T-p (p=1.22±0.01), are extracted. We conclude that the dominant dephasing mechanism at these temperatures is electron-electron (e-e) scattering in the Nyquist limit. Evidence of a crossover from two-dimensional to three-dimensional behavior with respect to both coherent transport (WL) and e-e interactions is observed in the temperature dependence of the zero-field conductivity and τφ, respectively.",

author = "Gilbertson, {A. M.} and Newaz, {A. K M} and Chang, {Woo Jin} and R. Bashir and Solin, {S. A.} and Cohen, {L. F.}",

note = "Funding Information: This work is supported by the UK EPSRC under Grant EP/F065922, by the U.S. NSF under Grant ECCS-0725538, and by the U.S. NIH under Grant 1U54CA11934201. S.A.S. is a cofounder of and has a financial interest in PixelEXX, Inc. a start-up company whose mission is to market imaging arrays.",

year = "2009",

doi = "10.1063/1.3176968",

language = "English (US)",

volume = "95",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

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TY - JOUR

T1 - Dimensional crossover and weak localization in a 90 nm n -GaAs thin film

AU - Gilbertson, A. M.

AU - Newaz, A. K M

AU - Chang, Woo Jin

AU - Bashir, R.

AU - Solin, S. A.

AU - Cohen, L. F.

N1 - Funding Information: This work is supported by the UK EPSRC under Grant EP/F065922, by the U.S. NSF under Grant ECCS-0725538, and by the U.S. NIH under Grant 1U54CA11934201. S.A.S. is a cofounder of and has a financial interest in PixelEXX, Inc. a start-up company whose mission is to market imaging arrays.

PY - 2009

Y1 - 2009

N2 - We report on the magnetotransport in a 90 nm thick n -type GaAs epitaxial thin film in the weak localization (WL) regime. Low temperature (T≥50 K) magnetotransport data are fit with WL theory, from which the phase coherence time, τφ ∝ T-p (p=1.22±0.01), are extracted. We conclude that the dominant dephasing mechanism at these temperatures is electron-electron (e-e) scattering in the Nyquist limit. Evidence of a crossover from two-dimensional to three-dimensional behavior with respect to both coherent transport (WL) and e-e interactions is observed in the temperature dependence of the zero-field conductivity and τφ, respectively.

AB - We report on the magnetotransport in a 90 nm thick n -type GaAs epitaxial thin film in the weak localization (WL) regime. Low temperature (T≥50 K) magnetotransport data are fit with WL theory, from which the phase coherence time, τφ ∝ T-p (p=1.22±0.01), are extracted. We conclude that the dominant dephasing mechanism at these temperatures is electron-electron (e-e) scattering in the Nyquist limit. Evidence of a crossover from two-dimensional to three-dimensional behavior with respect to both coherent transport (WL) and e-e interactions is observed in the temperature dependence of the zero-field conductivity and τφ, respectively.

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DO - 10.1063/1.3176968

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VL - 95

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 1

M1 - 012113

ER -

Dimensional crossover and weak localization in a 90 nm n -GaAs thin film

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