We report on the magnetotransport in a 90 nm thick n -type GaAs epitaxial thin film in the weak localization (WL) regime. Low temperature (T≥50 K) magnetotransport data are fit with WL theory, from which the phase coherence time, τφ ∝ T-p (p=1.22±0.01), are extracted. We conclude that the dominant dephasing mechanism at these temperatures is electron-electron (e-e) scattering in the Nyquist limit. Evidence of a crossover from two-dimensional to three-dimensional behavior with respect to both coherent transport (WL) and e-e interactions is observed in the temperature dependence of the zero-field conductivity and τφ, respectively.

Original languageEnglish (US)
Article number012113
JournalApplied Physics Letters
Issue number1
StatePublished - 2009

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


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