Abstract
A multigigabit digital performance of a monolithic metal-semiconductor-metal high electron mobility transistor (MSM-HEMT) photoreceiver lattice matched to an InP substrate is presented. The integration of MSM photodetectors and HEMT is done via vertical integration method in which the HEMT and MSM layers are grown sequentially on a planar substrate in a single uninterrupted growth. Receiver output noise power spectral density measurements were performed. Deviation from the expected sensitivity performance was observed experimentally, and possible sources of the discrepancies are examined.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 475-478 |
| Number of pages | 4 |
| Journal | Conference Proceedings - International Conference on Indium Phosphide and Related Materials |
| State | Published - 1997 |
| Event | Proceedings of the 1997 International Conference on Indium Phosphide and Related Materials - Cape Cod, MA, USA Duration: May 11 1997 → May 15 1997 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering