Digital etching of III-N materials using a two-step Ar/KOH technique

David Keogh, Peter Asbeck, Theodore Chung, Russell D. Dupuis, Milton Feng

Research output: Contribution to journalArticlepeer-review


A two-step digital etch technique, based on an argon plasma exposure followed by a 0.2 M boiling KOH surface treatment, is shown to be effective for etching III-N materials. Etching takes place as a result of the fact that damaged nitride material, whose depth can be controlled by the argon reactive ion etching (RIE) plasma, is susceptible to removal in heated solutions of KOH, which has been demonstrated for GaN, AlGaN, and InGaN. The process is shown to be highly linear across a number of digital etch cycles and capable of producing smooth surface morphologies.

Original languageEnglish (US)
Pages (from-to)771-776
Number of pages6
JournalJournal of Electronic Materials
Issue number4
StatePublished - Apr 1 2006


  • Digital etch
  • GaN
  • KOH

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry


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