Skip to main navigation
Skip to search
Skip to main content
University of Illinois Urbana-Champaign Home
LOGIN & Help
Home
Profiles
Research units
Research & Scholarship
Datasets
Honors
Press/Media
Activities
Search by expertise, name or affiliation
Diffusion of be and mn during damage recovery of ion implanted GaAs
H. Kanber,
M. Feng
, J. M. Whelan
Research output
:
Contribution to journal
›
Article
›
peer-review
Overview
Fingerprint
Fingerprint
Dive into the research topics of 'Diffusion of be and mn during damage recovery of ion implanted GaAs'. Together they form a unique fingerprint.
Sort by
Weight
Alphabetically
Engineering & Materials Science
Impurities
57%
Ions
55%
Recovery
40%
Atoms
31%
Fermi level
25%
Point defects
23%
Protective atmospheres
21%
Capacitance measurement
21%
Ion implantation
20%
Voltage measurement
18%
Chemical activation
13%
Substrates
10%
Temperature
6%
Physics & Astronomy
recovery
48%
damage
42%
profiles
32%
impurities
31%
ions
28%
controlled atmospheres
16%
overpressure
15%
secondary ion mass spectrometry
12%
atoms
12%
electrical measurement
11%
point defects
11%
ion implantation
11%
disturbances
10%
interstitials
10%
purity
10%
capacitance
9%
activation
9%
annealing
7%
temperature
3%
energy
3%
Mathematics
Damage
70%
Recovery
58%
Profile
51%
Ion Implantation
22%
Mass Spectrometry
18%
Annealing
16%
Atmosphere
15%
Activation
14%
Voltage
13%
Disturbance
11%
Trace
9%
Influence
9%
Energy
8%
Model
3%
Chemical Compounds
Implanted Ion
85%
Controlled Atmosphere
27%
Donor
27%
Arsine
25%
Crystal Point Defect
25%
Secondary Ion Mass Spectroscopy
21%
Annealing
15%
Purity
10%
Application
6%