Diffusion-limited submonolayer pentacene thin film growth on hydrogen-passivated Si(1 1 1) substrates

W. J. Huang, B. Q. Li, J. M. Zuo

Research output: Contribution to journalArticlepeer-review

Abstract

Growth of ultrathin pentacene films is investigated as a function of coverage by atomic force microscopy. Initially, pentacene grows as monolayer fractal islands and evolves into compact islands before coalescence. Stabilization factors, against diffusion-limited-aggregation in terms of interaction between islands and interlayer monomer transport, are proposed to explain the shape transition. Simulations based on a simple model of heterogeneous film growth are found to agree with experimental observations. The role of surface diffusion in island shape transition is revealed by a comparison between pentacene growth on the hydrogen terminated and oxidized Si substrates.

Original languageEnglish (US)
Pages (from-to)157-164
Number of pages8
JournalSurface Science
Volume595
Issue number1-3
DOIs
StatePublished - Dec 5 2005

Keywords

  • Atomic force microscopy
  • Growth
  • Island shape
  • Organic thin film

ASJC Scopus subject areas

  • Physical and Theoretical Chemistry
  • Condensed Matter Physics
  • Surfaces and Interfaces

Fingerprint

Dive into the research topics of 'Diffusion-limited submonolayer pentacene thin film growth on hydrogen-passivated Si(1 1 1) substrates'. Together they form a unique fingerprint.

Cite this