Abstract
Diffusion in L12 structure is investigated by means of atomistic kinetic Monte Carlo simulations on a rigid lattice. We observe that two diffusion mechanisms resulting from the interactions of vacancies with antisites located on both sublattices allow for the displacement of the minority element and can enhance the diffusivity of the majority element. The respective contributions to the diffusion process of these two mechanisms depend on temperature and on the deviation from the stoichiometric composition. They can explain the minimum of nickel diffusivity experimentally observed around the stoichiometic composition in Ni3Al and the suspected lower activation energy for gallium than for nickel in Ni3Ga.
Original language | English (US) |
---|---|
Pages (from-to) | 441-446 |
Number of pages | 6 |
Journal | Defect and Diffusion Forum |
Issue number | 194-199 PART 1 |
DOIs | |
State | Published - 2001 |
Keywords
- L1 Ordered Phase
- Monte-Carlo (MC) Simulation
- Tracer Diffusion
- Vacancy Diffusion Mechanism
ASJC Scopus subject areas
- Metals and Alloys