Diffusion characterization using electron beam induced current and time-resolved photoluminescence of InAs/InAsSb type-II superlattices

D. Zuo, R. Liu, J. Mabon, Z. Y. He, S. Liu, Y. H. Zhang, E. A. Kadlec, B. Olson, E. A. Shaner, Daniel M Wasserman

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We present the characterization of minority carrier diffusion length and surface recombination velocity, as well as vertical diffusivity and mobility by performing an electron beam induced current measurement in addition to an optical lifetime measurement.

Original languageEnglish (US)
Title of host publicationCLEO
Subtitle of host publicationScience and Innovations, CLEO-SI 2015
PublisherOptical Society of America (OSA)
Number of pages1
ISBN (Electronic)9781557529688
DOIs
StatePublished - May 4 2015
EventCLEO: Science and Innovations, CLEO-SI 2015 - San Jose, United States
Duration: May 10 2015May 15 2015

Publication series

NameCLEO: Science and Innovations, CLEO-SI 2015

Other

OtherCLEO: Science and Innovations, CLEO-SI 2015
CountryUnited States
CitySan Jose
Period5/10/155/15/15

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering
  • Atomic and Molecular Physics, and Optics

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    Zuo, D., Liu, R., Mabon, J., He, Z. Y., Liu, S., Zhang, Y. H., Kadlec, E. A., Olson, B., Shaner, E. A., & Wasserman, D. M. (2015). Diffusion characterization using electron beam induced current and time-resolved photoluminescence of InAs/InAsSb type-II superlattices. In CLEO: Science and Innovations, CLEO-SI 2015 (CLEO: Science and Innovations, CLEO-SI 2015). Optical Society of America (OSA). https://doi.org/10.1364/CLEO_SI.2015.SM2G.4