Diffusion barrier characteristics of zirconium diboride films grown by remote plasma CVD

J. Sung, D. M. Goedde, G. S. Girolami, J. R. Abelson

Research output: Contribution to journalConference articlepeer-review

Abstract

Low resistivity and fully conformal ZrBi thin films are deposited by remote plasma chemical vapor deposition using zirconium tetrahydroborate, Zr(BH4)4. The problems with thermal CVD using this precursor -excess B incorporation, oxygen contamination, and high resistivity - are eliminated by injecting atomic hydrogen from a remote microwave plasma source onto the substrate. Using this technique, the films are stoichiometric, have ∼40 μΩ-cm resistivity, < 4 at.% oxygen contamination, and are fully conformal in deep trenches and vias. We show that a 50 nm thick ZrB2 film on c-Si (100) prevents Cu in-diffusion after 1 hour annealing at 650°C.

Original languageEnglish (US)
Pages (from-to)39-44
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume563
DOIs
StatePublished - 1999
EventProceedings of the 1999 MRS Spring Meeting - Symposium on 'Materials Reliability in Microelectronics IX' - San Francisco, CA, United States
Duration: Apr 6 1999Apr 8 1999

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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