Diffusion barrier characteristics of zirconium diboride films grown by remote plasma CVD

J. Sung, D. M. Goedde, G. S. Girolami, J. R. Abelson

Research output: Contribution to journalConference article

Abstract

Low resistivity and fully conformal ZrBi thin films are deposited by remote plasma chemical vapor deposition using zirconium tetrahydroborate, Zr(BH4)4. The problems with thermal CVD using this precursor -excess B incorporation, oxygen contamination, and high resistivity - are eliminated by injecting atomic hydrogen from a remote microwave plasma source onto the substrate. Using this technique, the films are stoichiometric, have ∼40 μΩ-cm resistivity, < 4 at.% oxygen contamination, and are fully conformal in deep trenches and vias. We show that a 50 nm thick ZrB2 film on c-Si (100) prevents Cu in-diffusion after 1 hour annealing at 650°C.

Original languageEnglish (US)
Pages (from-to)39-44
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume563
DOIs
StatePublished - 1999
EventProceedings of the 1999 MRS Spring Meeting - Symposium on 'Materials Reliability in Microelectronics IX' - San Francisco, CA, United States
Duration: Apr 6 1999Apr 8 1999

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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