Abstract
Low resistivity and fully conformal ZrBi thin films are deposited by remote plasma chemical vapor deposition using zirconium tetrahydroborate, Zr(BH4)4. The problems with thermal CVD using this precursor -excess B incorporation, oxygen contamination, and high resistivity - are eliminated by injecting atomic hydrogen from a remote microwave plasma source onto the substrate. Using this technique, the films are stoichiometric, have ∼40 μΩ-cm resistivity, < 4 at.% oxygen contamination, and are fully conformal in deep trenches and vias. We show that a 50 nm thick ZrB2 film on c-Si (100) prevents Cu in-diffusion after 1 hour annealing at 650°C.
Original language | English (US) |
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Pages (from-to) | 39-44 |
Number of pages | 6 |
Journal | Materials Research Society Symposium - Proceedings |
Volume | 563 |
DOIs | |
State | Published - 1999 |
Event | Proceedings of the 1999 MRS Spring Meeting - Symposium on 'Materials Reliability in Microelectronics IX' - San Francisco, CA, United States Duration: Apr 6 1999 → Apr 8 1999 |
ASJC Scopus subject areas
- General Materials Science
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering