Abstract

Sputter yields for ion bombardment of Si1-x Gex alloys are computed using molecular dynamics simulations with the target material modeled using the Stillinger-Weber empirical potential. The results show that Si atoms are preferentially sputtered relative to Ge atoms for all x. The parameters of the Stillinger-Weber potential are altered to investigate the relative importance of atomic mass, bonding energy, atomic number, and atomic density leading to the observed differential sputter yields. The results explain an experimentally observed nonlinear dependence of total sputter yields on composition in Si1-x Gex [Tuboltsev, Phys. Rev. B 72, 205434 (2005)].

Original languageEnglish (US)
Article number073508
JournalJournal of Applied Physics
Volume103
Issue number7
DOIs
StatePublished - Apr 21 2008

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atomic weights
nuclear energy
atoms
bombardment
molecular dynamics
ions
simulation

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Differential sputter yields in Si1-x Gex. / Hossain, M. Zubaer; Freund, Jonathan B.; Johnson, H. T.

In: Journal of Applied Physics, Vol. 103, No. 7, 073508, 21.04.2008.

Research output: Contribution to journalArticle

@article{0b68dd01bbf44acab6bf7dc512c95266,
title = "Differential sputter yields in Si1-x Gex",
abstract = "Sputter yields for ion bombardment of Si1-x Gex alloys are computed using molecular dynamics simulations with the target material modeled using the Stillinger-Weber empirical potential. The results show that Si atoms are preferentially sputtered relative to Ge atoms for all x. The parameters of the Stillinger-Weber potential are altered to investigate the relative importance of atomic mass, bonding energy, atomic number, and atomic density leading to the observed differential sputter yields. The results explain an experimentally observed nonlinear dependence of total sputter yields on composition in Si1-x Gex [Tuboltsev, Phys. Rev. B 72, 205434 (2005)].",
author = "Hossain, {M. Zubaer} and Freund, {Jonathan B.} and Johnson, {H. T.}",
year = "2008",
month = "4",
day = "21",
doi = "10.1063/1.2896451",
language = "English (US)",
volume = "103",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "American Institute of Physics Publising LLC",
number = "7",

}

TY - JOUR

T1 - Differential sputter yields in Si1-x Gex

AU - Hossain, M. Zubaer

AU - Freund, Jonathan B.

AU - Johnson, H. T.

PY - 2008/4/21

Y1 - 2008/4/21

N2 - Sputter yields for ion bombardment of Si1-x Gex alloys are computed using molecular dynamics simulations with the target material modeled using the Stillinger-Weber empirical potential. The results show that Si atoms are preferentially sputtered relative to Ge atoms for all x. The parameters of the Stillinger-Weber potential are altered to investigate the relative importance of atomic mass, bonding energy, atomic number, and atomic density leading to the observed differential sputter yields. The results explain an experimentally observed nonlinear dependence of total sputter yields on composition in Si1-x Gex [Tuboltsev, Phys. Rev. B 72, 205434 (2005)].

AB - Sputter yields for ion bombardment of Si1-x Gex alloys are computed using molecular dynamics simulations with the target material modeled using the Stillinger-Weber empirical potential. The results show that Si atoms are preferentially sputtered relative to Ge atoms for all x. The parameters of the Stillinger-Weber potential are altered to investigate the relative importance of atomic mass, bonding energy, atomic number, and atomic density leading to the observed differential sputter yields. The results explain an experimentally observed nonlinear dependence of total sputter yields on composition in Si1-x Gex [Tuboltsev, Phys. Rev. B 72, 205434 (2005)].

UR - http://www.scopus.com/inward/record.url?scp=42149162849&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=42149162849&partnerID=8YFLogxK

U2 - 10.1063/1.2896451

DO - 10.1063/1.2896451

M3 - Article

AN - SCOPUS:42149162849

VL - 103

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 7

M1 - 073508

ER -