Dielectrophoresis and chemically mediated directed self-assembly of micrometer-scale three-terminal metal oxide semiconductor field-effect transistors

A process for 3D integration of silicon devices and for heterogeneous integration of electronic, microelectromechanical system (MEMS), is presented. A directed self-assembly of three-terminal single-crystal MOSFETs using dielectrophoresis and chemical molecules was designed to serve the purpose. After the assembly, the devices are held in place during the drying process of either leaving the DEP voltage on or through the use of a SAM layer, although the latter exhibited lower efficiency. The devices were found to operate normally after the assembly and due to the presence of parasitic resistance between the device electrodes and the substrate electrodes.