Dielectric properties of oriented PbZrO 3 thin films grown by sol-gel process

Jiwei Zhai; Y. Yao; X. Li; T. F. Hung; Z. K. Xu; Haydn Chen; Eugene V. Colla; T. B. Wu

doi:10.1063/1.1505981

Dielectric properties of oriented PbZrO ₃ thin films grown by sol-gel process

Jiwei Zhai, Y. Yao, X. Li, T. F. Hung, Z. K. Xu, Haydn Chen, Eugene V. Colla, T. B. Wu

Research output: Contribution to journal › Article › peer-review

Abstract

Antiferroelectric PbZrO ₃ (PZ) films have been fabricated on LaNiO ₃/Pt/Ti/SiO ₂/Si substrates using a sol-gel process. The films with perovskite structure showed highly 〈001〉 preferred orientation. An antiferroelectric phase was identified by the presence of 1/4110 superlattice spots in a [001] selected area electron diffraction pattern. The field-induced antiferroelectric to ferroelectric phase switching was demonstrated at room temperature with full saturation and a maximum polarization of 40 μC/cm ². Dielectric properties were investigated as a function of both temperature and frequency. The presence of a conductive buffer layer of LaNiO ₃ on Pt/Ti/SiO ₂/Si substrate enabled the growth of high quality and highly oriented PZ antiferroelectric thin films that showed near zero remanent polarization and squared hysteresis loops.

Original language	English (US)
Pages (from-to)	3990-3994
Number of pages	5
Journal	Journal of Applied Physics
Volume	92
Issue number	7
DOIs	https://doi.org/10.1063/1.1505981
State	Published - Oct 1 2002
Externally published	Yes

ASJC Scopus subject areas

General Physics and Astronomy

Online availability

10.1063/1.1505981

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Cite this

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title = "Dielectric properties of oriented PbZrO 3 thin films grown by sol-gel process",

abstract = "Antiferroelectric PbZrO 3 (PZ) films have been fabricated on LaNiO 3/Pt/Ti/SiO 2/Si substrates using a sol-gel process. The films with perovskite structure showed highly 〈001〉 preferred orientation. An antiferroelectric phase was identified by the presence of 1/4110 superlattice spots in a [001] selected area electron diffraction pattern. The field-induced antiferroelectric to ferroelectric phase switching was demonstrated at room temperature with full saturation and a maximum polarization of 40 μC/cm 2. Dielectric properties were investigated as a function of both temperature and frequency. The presence of a conductive buffer layer of LaNiO 3 on Pt/Ti/SiO 2/Si substrate enabled the growth of high quality and highly oriented PZ antiferroelectric thin films that showed near zero remanent polarization and squared hysteresis loops.",

author = "Jiwei Zhai and Y. Yao and X. Li and Hung, {T. F.} and Xu, {Z. K.} and Haydn Chen and Colla, {Eugene V.} and Wu, {T. B.}",

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AU - Zhai, Jiwei

AU - Yao, Y.

AU - Li, X.

AU - Hung, T. F.

AU - Xu, Z. K.

AU - Chen, Haydn

AU - Colla, Eugene V.

AU - Wu, T. B.

PY - 2002/10/1

Y1 - 2002/10/1

N2 - Antiferroelectric PbZrO 3 (PZ) films have been fabricated on LaNiO 3/Pt/Ti/SiO 2/Si substrates using a sol-gel process. The films with perovskite structure showed highly 〈001〉 preferred orientation. An antiferroelectric phase was identified by the presence of 1/4110 superlattice spots in a [001] selected area electron diffraction pattern. The field-induced antiferroelectric to ferroelectric phase switching was demonstrated at room temperature with full saturation and a maximum polarization of 40 μC/cm 2. Dielectric properties were investigated as a function of both temperature and frequency. The presence of a conductive buffer layer of LaNiO 3 on Pt/Ti/SiO 2/Si substrate enabled the growth of high quality and highly oriented PZ antiferroelectric thin films that showed near zero remanent polarization and squared hysteresis loops.

AB - Antiferroelectric PbZrO 3 (PZ) films have been fabricated on LaNiO 3/Pt/Ti/SiO 2/Si substrates using a sol-gel process. The films with perovskite structure showed highly 〈001〉 preferred orientation. An antiferroelectric phase was identified by the presence of 1/4110 superlattice spots in a [001] selected area electron diffraction pattern. The field-induced antiferroelectric to ferroelectric phase switching was demonstrated at room temperature with full saturation and a maximum polarization of 40 μC/cm 2. Dielectric properties were investigated as a function of both temperature and frequency. The presence of a conductive buffer layer of LaNiO 3 on Pt/Ti/SiO 2/Si substrate enabled the growth of high quality and highly oriented PZ antiferroelectric thin films that showed near zero remanent polarization and squared hysteresis loops.

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