Dielectric properties of oriented PbZrO 3 thin films grown by sol-gel process

Jiwei Zhai, Y. Yao, X. Li, T. F. Hung, Z. K. Xu, Haydn Chen, Eugene V. Colla, T. B. Wu

Research output: Contribution to journalArticlepeer-review


Antiferroelectric PbZrO 3 (PZ) films have been fabricated on LaNiO 3/Pt/Ti/SiO 2/Si substrates using a sol-gel process. The films with perovskite structure showed highly 〈001〉 preferred orientation. An antiferroelectric phase was identified by the presence of 1/4110 superlattice spots in a [001] selected area electron diffraction pattern. The field-induced antiferroelectric to ferroelectric phase switching was demonstrated at room temperature with full saturation and a maximum polarization of 40 μC/cm 2. Dielectric properties were investigated as a function of both temperature and frequency. The presence of a conductive buffer layer of LaNiO 3 on Pt/Ti/SiO 2/Si substrate enabled the growth of high quality and highly oriented PZ antiferroelectric thin films that showed near zero remanent polarization and squared hysteresis loops.

Original languageEnglish (US)
Pages (from-to)3990-3994
Number of pages5
JournalJournal of Applied Physics
Issue number7
StatePublished - Oct 1 2002
Externally publishedYes

ASJC Scopus subject areas

  • General Physics and Astronomy


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