Dielectric and ferroelectric properties of highly oriented (Pb,Nb)(Zr,Sn,Ti)O3 thin films grown by a sol-gel process

Zhai Jiwei; M. H. Cheung; Zheng Kui Xu; Xin Li; Haydn Chen; Eugene V. Colla; T. B. Wu

doi:10.1063/1.1519944

Dielectric and ferroelectric properties of highly oriented (Pb,Nb)(Zr,Sn,Ti)O₃ thin films grown by a sol-gel process

Zhai Jiwei, M. H. Cheung, Zheng Kui Xu, Xin Li, Haydn Chen, Eugene V. Colla, T. B. Wu

Physics

Research output: Contribution to journal › Article › peer-review

Abstract

Antiferroelectric (Pb,Nb)(Zr,Sn,Ti)O₃ thin films were deposited via a sol-gel process on LaNiO₃-coated silicon substrates. Films showed a strong (001) preferred orientation upon annealing at 500-700°C for 30 min. The dependence of electrical properties on film thickness has been studied, with the emphasis placed on field-induced phase switching from the antiferroelectric to the ferroelectric state. The decrease of film thickness led to an increase of the phase-switching field along with the appearance of remanent polarization. However, the dielectric constant and maximum polarization decreased with the reduction of film thickness. Saturation polarization was 35 μC/cm², which is equal to that observed in bulk samples.

Original language	English (US)
Pages (from-to)	3621-3623
Number of pages	3
Journal	Applied Physics Letters
Volume	81
Issue number	19
DOIs	https://doi.org/10.1063/1.1519944
State	Published - Nov 4 2002

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.1519944

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Cite this

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title = "Dielectric and ferroelectric properties of highly oriented (Pb,Nb)(Zr,Sn,Ti)O3 thin films grown by a sol-gel process",

abstract = "Antiferroelectric (Pb,Nb)(Zr,Sn,Ti)O3 thin films were deposited via a sol-gel process on LaNiO3-coated silicon substrates. Films showed a strong (001) preferred orientation upon annealing at 500-700°C for 30 min. The dependence of electrical properties on film thickness has been studied, with the emphasis placed on field-induced phase switching from the antiferroelectric to the ferroelectric state. The decrease of film thickness led to an increase of the phase-switching field along with the appearance of remanent polarization. However, the dielectric constant and maximum polarization decreased with the reduction of film thickness. Saturation polarization was 35 μC/cm2, which is equal to that observed in bulk samples.",

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AU - Jiwei, Zhai

AU - Cheung, M. H.

AU - Xu, Zheng Kui

AU - Li, Xin

AU - Chen, Haydn

AU - Colla, Eugene V.

AU - Wu, T. B.

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AB - Antiferroelectric (Pb,Nb)(Zr,Sn,Ti)O3 thin films were deposited via a sol-gel process on LaNiO3-coated silicon substrates. Films showed a strong (001) preferred orientation upon annealing at 500-700°C for 30 min. The dependence of electrical properties on film thickness has been studied, with the emphasis placed on field-induced phase switching from the antiferroelectric to the ferroelectric state. The decrease of film thickness led to an increase of the phase-switching field along with the appearance of remanent polarization. However, the dielectric constant and maximum polarization decreased with the reduction of film thickness. Saturation polarization was 35 μC/cm2, which is equal to that observed in bulk samples.

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