Abstract
Antiferroelectric (Pb,Nb)(Zr,Sn,Ti)O3 thin films were deposited via a sol-gel process on LaNiO3-coated silicon substrates. Films showed a strong (001) preferred orientation upon annealing at 500-700°C for 30 min. The dependence of electrical properties on film thickness has been studied, with the emphasis placed on field-induced phase switching from the antiferroelectric to the ferroelectric state. The decrease of film thickness led to an increase of the phase-switching field along with the appearance of remanent polarization. However, the dielectric constant and maximum polarization decreased with the reduction of film thickness. Saturation polarization was 35 μC/cm2, which is equal to that observed in bulk samples.
Original language | English (US) |
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Pages (from-to) | 3621-3623 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 81 |
Issue number | 19 |
DOIs | |
State | Published - Nov 4 2002 |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)