Diamond synthesis in a low-pressure flat flame

N. G. Glumac; D. G. Goodwin

doi:10.1016/0040-6090(92)90508-9

Diamond synthesis in a low-pressure flat flame

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Abstract

A low-pressure flat flame burner was constructed and used to grow diamond films on silicon and molybdenum substrates in oxygen-acetylene flames at 40 Torr. Both isolated, well faceted diamond particles and continuous films covering the entire substrate (12 cm²) were grown. Nucleation was found to be significantly enhanced by altering the flame conditions initially, thereby depositing a thin, non-diamond carbon layer onto the silicon substrates. This procedure was required to grow continuous films. Flame simulations were carried out, and explain why the flame stoichiometry required for diamond growth at low pressure differs significantly from that required at atmospheric pressure.

Original language	English (US)
Pages (from-to)	122-126
Number of pages	5
Journal	Thin Solid Films
Volume	212
Issue number	1-2
DOIs	https://doi.org/10.1016/0040-6090(92)90508-9
State	Published - May 15 1992
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

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10.1016/0040-6090(92)90508-9

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abstract = "A low-pressure flat flame burner was constructed and used to grow diamond films on silicon and molybdenum substrates in oxygen-acetylene flames at 40 Torr. Both isolated, well faceted diamond particles and continuous films covering the entire substrate (12 cm2) were grown. Nucleation was found to be significantly enhanced by altering the flame conditions initially, thereby depositing a thin, non-diamond carbon layer onto the silicon substrates. This procedure was required to grow continuous films. Flame simulations were carried out, and explain why the flame stoichiometry required for diamond growth at low pressure differs significantly from that required at atmospheric pressure.",

author = "Glumac, {N. G.} and Goodwin, {D. G.}",

note = "Funding Information: This work is supported, in part, by the National Science Foundation (Grant Nos. CTS-8921579 and CTS-9057921). A PYI Matching Grant from Norton Co. is also gratefully acknowledged. Copyright: Copyright 2014 Elsevier B.V., All rights reserved.",

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AU - Goodwin, D. G.

N1 - Funding Information: This work is supported, in part, by the National Science Foundation (Grant Nos. CTS-8921579 and CTS-9057921). A PYI Matching Grant from Norton Co. is also gratefully acknowledged. Copyright: Copyright 2014 Elsevier B.V., All rights reserved.

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Y1 - 1992/5/15

N2 - A low-pressure flat flame burner was constructed and used to grow diamond films on silicon and molybdenum substrates in oxygen-acetylene flames at 40 Torr. Both isolated, well faceted diamond particles and continuous films covering the entire substrate (12 cm2) were grown. Nucleation was found to be significantly enhanced by altering the flame conditions initially, thereby depositing a thin, non-diamond carbon layer onto the silicon substrates. This procedure was required to grow continuous films. Flame simulations were carried out, and explain why the flame stoichiometry required for diamond growth at low pressure differs significantly from that required at atmospheric pressure.

AB - A low-pressure flat flame burner was constructed and used to grow diamond films on silicon and molybdenum substrates in oxygen-acetylene flames at 40 Torr. Both isolated, well faceted diamond particles and continuous films covering the entire substrate (12 cm2) were grown. Nucleation was found to be significantly enhanced by altering the flame conditions initially, thereby depositing a thin, non-diamond carbon layer onto the silicon substrates. This procedure was required to grow continuous films. Flame simulations were carried out, and explain why the flame stoichiometry required for diamond growth at low pressure differs significantly from that required at atmospheric pressure.

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Diamond synthesis in a low-pressure flat flame

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