@inproceedings{207b7276fca74a2b886f09e5bf758c23,
title = "Diamond Power Electronics: From 1kV towards 10kV Breakdown Voltage",
abstract = "The rapidly growing demand for power electronics to rout, control, and convert electrical power motivates recent research into devices based on ultra-wide-bandgaps semiconductors. Diamond-based semiconductor devices have drawn increasing attention in high-power applications due to diamond's extraordinary electrical and physical properties. It has a 5.5 eV band gap and over 7.7MV cm-1 breakdown field. Diamond is also one of the best thermal conductors with thermal conductivity over 2200 Wm-1k-1, making it an ideal material for high power applications where heat dissipation is challenging [1]. To demonstrate diamond's advantages in power electronics, diamond power diodes and transistors are fabricated with breakdown voltages much higher than devices based on other wide band-gap materials.",
keywords = "Diamond, Metal semiconductor field effect transistors, Schottky barrier diodes",
author = "Z. Han and Lee, {H. P.} and B. Bayram and C. Bayram",
note = "Publisher Copyright: {\textcopyright} 2022 IEEE.; 2022 Compound Semiconductor Week, CSW 2022 ; Conference date: 01-06-2022 Through 03-06-2022",
year = "2022",
doi = "10.1109/CSW55288.2022.9930383",
language = "English (US)",
series = "2022 Compound Semiconductor Week, CSW 2022",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "2022 Compound Semiconductor Week, CSW 2022",
address = "United States",
}