Diamond Power Electronics: From 1kV towards 10kV Breakdown Voltage

Z. Han, H. P. Lee, B. Bayram, C. Bayram

Research output: Chapter in Book/Report/Conference proceedingConference contribution


The rapidly growing demand for power electronics to rout, control, and convert electrical power motivates recent research into devices based on ultra-wide-bandgaps semiconductors. Diamond-based semiconductor devices have drawn increasing attention in high-power applications due to diamond's extraordinary electrical and physical properties. It has a 5.5 eV band gap and over 7.7MV cm-1 breakdown field. Diamond is also one of the best thermal conductors with thermal conductivity over 2200 Wm-1k-1, making it an ideal material for high power applications where heat dissipation is challenging [1]. To demonstrate diamond's advantages in power electronics, diamond power diodes and transistors are fabricated with breakdown voltages much higher than devices based on other wide band-gap materials.

Original languageEnglish (US)
Title of host publication2022 Compound Semiconductor Week, CSW 2022
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781665453400
StatePublished - 2022
Event2022 Compound Semiconductor Week, CSW 2022 - Ann Arbor, United States
Duration: Jun 1 2022Jun 3 2022

Publication series

Name2022 Compound Semiconductor Week, CSW 2022


Conference2022 Compound Semiconductor Week, CSW 2022
Country/TerritoryUnited States
CityAnn Arbor


  • Diamond
  • Metal semiconductor field effect transistors
  • Schottky barrier diodes

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Ceramics and Composites
  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics


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