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Device-quality CuInSe
2
produced by the hybrid process
H. Talieh, A. Rockett
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peer-review
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2
produced by the hybrid process'. Together they form a unique fingerprint.
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Keyphrases
CuInSe2
100%
Hybrid Process
100%
Indium
83%
Selenium
33%
Film Composition
33%
Solar Technology
33%
Air Annealing
33%
Dislocation
16%
Solar Cell
16%
Chalcopyrite Structure
16%
Device-independent
16%
Microtwins
16%
Electron Diffraction Pattern
16%
Deposition Rate
16%
Stacking Faults
16%
Resistivity
16%
Fill Factor
16%
Conversion Efficiency
16%
Point Contact
16%
Linear Relationship
16%
Sublattice
16%
Defected Ground Structure
16%
Hybrid System
16%
Transmission Electron Microscope
16%
Ion Current
16%
Film Structure
16%
Substrate Temperature
16%
Near Stoichiometric
16%
Energy Conversion
16%
University of Delaware
16%
Processed Material
16%
Single-layer Film
16%
Selenium Content
16%
Co-deposition
16%
Intergranular Pores
16%
Varying Thickness
16%
Metal Constituents
16%
Alloy Layer
16%
Defect numbers
16%
Cu-In Alloy
16%
Electron Microscopic Analysis
16%
Heterostructure Solar Cell
16%
Diode-like
16%
Solar Illumination
16%
Material Science
Film
100%
Indium
45%
Annealing
18%
Solar Cell
18%
Electron Diffraction
9%
Density
9%
Electron Microscopy
9%
Electrical Resistivity
9%
Heterojunction
9%
Diffraction Pattern
9%
Material Processing
9%
Stacking Fault
9%
Defect Structure
9%
Indium Tin Oxide
9%