Device properties of nanopore PN junction Si for photovoltaic application

Hyunjong Jin, Te Wei Chang, Gang Logan Liu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Improvement of energy conversion efficiency of solar cells has led to innovative approaches, in particular the introduction of nanopillar photovoltaics [1]. Previous work on nanopillar Si photovoltaic has shown broadband reduction in optical reflection and enhancement of absorption [2]. Radial or axial PN junctions [3, 4] have been of high interest for improved photovoltaic devices. However, with the PN junction incorporated as part of the pillar, the discreteness of individual pillar requires additional conductive layer that would electrically short the top of each pillar for efficient carrier extraction. The fragile structure of the surface pillars would also require a protection layer for possible mechanical scratch to prevent pillars from breaking. Any additional layer that is applied, either for electrical contact or for mechanical properties may introduce additional recombination sites and also reduce the actual light absorption by the photovoltaic material. In this paper, nanopore Si photovoltaics that not only provides the advantages but also addresses the challenges of nanopillers is demonstrated. PN junction substrate of 250 nm thick N-type polycrystalline Si on P-type Si wafer is prepared. The nanopore structure is formed by using anodized aluminum oxide (AAO) as an etching mask against deep reactive ionic etching (DRIE). The device consists of semi-ordered pores of ∼70 nm diameter.

Original languageEnglish (US)
Title of host publicationNext Generation (Nano) Photonic and Cell Technologies for Solar Energy Conversion II
DOIs
StatePublished - Oct 19 2011
EventNext Generation (Nano) Photonic and Cell Technologies for Solar Energy Conversion II - San Diego, CA, United States
Duration: Aug 21 2011Aug 23 2011

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume8111
ISSN (Print)0277-786X

Other

OtherNext Generation (Nano) Photonic and Cell Technologies for Solar Energy Conversion II
CountryUnited States
CitySan Diego, CA
Period8/21/118/23/11

Fingerprint

Nanopore
Nanopores
Etching
Aluminum Oxide
Energy conversion
etching
Light absorption
Conversion efficiency
Masks
optical reflection
Solar cells
energy conversion efficiency
electromagnetic absorption
Aluminum
Absorption
Mechanical properties
Oxides
electric contacts
Substrates
masks

Keywords

  • Aluminum anodized oxide
  • Nanopore
  • Nanotexture
  • Photovoltaic

ASJC Scopus subject areas

  • Applied Mathematics
  • Computer Science Applications
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Jin, H., Chang, T. W., & Liu, G. L. (2011). Device properties of nanopore PN junction Si for photovoltaic application. In Next Generation (Nano) Photonic and Cell Technologies for Solar Energy Conversion II [811118] (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 8111). https://doi.org/10.1117/12.893647

Device properties of nanopore PN junction Si for photovoltaic application. / Jin, Hyunjong; Chang, Te Wei; Liu, Gang Logan.

Next Generation (Nano) Photonic and Cell Technologies for Solar Energy Conversion II. 2011. 811118 (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 8111).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Jin, H, Chang, TW & Liu, GL 2011, Device properties of nanopore PN junction Si for photovoltaic application. in Next Generation (Nano) Photonic and Cell Technologies for Solar Energy Conversion II., 811118, Proceedings of SPIE - The International Society for Optical Engineering, vol. 8111, Next Generation (Nano) Photonic and Cell Technologies for Solar Energy Conversion II, San Diego, CA, United States, 8/21/11. https://doi.org/10.1117/12.893647
Jin H, Chang TW, Liu GL. Device properties of nanopore PN junction Si for photovoltaic application. In Next Generation (Nano) Photonic and Cell Technologies for Solar Energy Conversion II. 2011. 811118. (Proceedings of SPIE - The International Society for Optical Engineering). https://doi.org/10.1117/12.893647
Jin, Hyunjong ; Chang, Te Wei ; Liu, Gang Logan. / Device properties of nanopore PN junction Si for photovoltaic application. Next Generation (Nano) Photonic and Cell Technologies for Solar Energy Conversion II. 2011. (Proceedings of SPIE - The International Society for Optical Engineering).
@inproceedings{2899f3b373c349e0936439cbadf784eb,
title = "Device properties of nanopore PN junction Si for photovoltaic application",
abstract = "Improvement of energy conversion efficiency of solar cells has led to innovative approaches, in particular the introduction of nanopillar photovoltaics [1]. Previous work on nanopillar Si photovoltaic has shown broadband reduction in optical reflection and enhancement of absorption [2]. Radial or axial PN junctions [3, 4] have been of high interest for improved photovoltaic devices. However, with the PN junction incorporated as part of the pillar, the discreteness of individual pillar requires additional conductive layer that would electrically short the top of each pillar for efficient carrier extraction. The fragile structure of the surface pillars would also require a protection layer for possible mechanical scratch to prevent pillars from breaking. Any additional layer that is applied, either for electrical contact or for mechanical properties may introduce additional recombination sites and also reduce the actual light absorption by the photovoltaic material. In this paper, nanopore Si photovoltaics that not only provides the advantages but also addresses the challenges of nanopillers is demonstrated. PN junction substrate of 250 nm thick N-type polycrystalline Si on P-type Si wafer is prepared. The nanopore structure is formed by using anodized aluminum oxide (AAO) as an etching mask against deep reactive ionic etching (DRIE). The device consists of semi-ordered pores of ∼70 nm diameter.",
keywords = "Aluminum anodized oxide, Nanopore, Nanotexture, Photovoltaic",
author = "Hyunjong Jin and Chang, {Te Wei} and Liu, {Gang Logan}",
year = "2011",
month = "10",
day = "19",
doi = "10.1117/12.893647",
language = "English (US)",
isbn = "9780819487216",
series = "Proceedings of SPIE - The International Society for Optical Engineering",
booktitle = "Next Generation (Nano) Photonic and Cell Technologies for Solar Energy Conversion II",

}

TY - GEN

T1 - Device properties of nanopore PN junction Si for photovoltaic application

AU - Jin, Hyunjong

AU - Chang, Te Wei

AU - Liu, Gang Logan

PY - 2011/10/19

Y1 - 2011/10/19

N2 - Improvement of energy conversion efficiency of solar cells has led to innovative approaches, in particular the introduction of nanopillar photovoltaics [1]. Previous work on nanopillar Si photovoltaic has shown broadband reduction in optical reflection and enhancement of absorption [2]. Radial or axial PN junctions [3, 4] have been of high interest for improved photovoltaic devices. However, with the PN junction incorporated as part of the pillar, the discreteness of individual pillar requires additional conductive layer that would electrically short the top of each pillar for efficient carrier extraction. The fragile structure of the surface pillars would also require a protection layer for possible mechanical scratch to prevent pillars from breaking. Any additional layer that is applied, either for electrical contact or for mechanical properties may introduce additional recombination sites and also reduce the actual light absorption by the photovoltaic material. In this paper, nanopore Si photovoltaics that not only provides the advantages but also addresses the challenges of nanopillers is demonstrated. PN junction substrate of 250 nm thick N-type polycrystalline Si on P-type Si wafer is prepared. The nanopore structure is formed by using anodized aluminum oxide (AAO) as an etching mask against deep reactive ionic etching (DRIE). The device consists of semi-ordered pores of ∼70 nm diameter.

AB - Improvement of energy conversion efficiency of solar cells has led to innovative approaches, in particular the introduction of nanopillar photovoltaics [1]. Previous work on nanopillar Si photovoltaic has shown broadband reduction in optical reflection and enhancement of absorption [2]. Radial or axial PN junctions [3, 4] have been of high interest for improved photovoltaic devices. However, with the PN junction incorporated as part of the pillar, the discreteness of individual pillar requires additional conductive layer that would electrically short the top of each pillar for efficient carrier extraction. The fragile structure of the surface pillars would also require a protection layer for possible mechanical scratch to prevent pillars from breaking. Any additional layer that is applied, either for electrical contact or for mechanical properties may introduce additional recombination sites and also reduce the actual light absorption by the photovoltaic material. In this paper, nanopore Si photovoltaics that not only provides the advantages but also addresses the challenges of nanopillers is demonstrated. PN junction substrate of 250 nm thick N-type polycrystalline Si on P-type Si wafer is prepared. The nanopore structure is formed by using anodized aluminum oxide (AAO) as an etching mask against deep reactive ionic etching (DRIE). The device consists of semi-ordered pores of ∼70 nm diameter.

KW - Aluminum anodized oxide

KW - Nanopore

KW - Nanotexture

KW - Photovoltaic

UR - http://www.scopus.com/inward/record.url?scp=80054053151&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=80054053151&partnerID=8YFLogxK

U2 - 10.1117/12.893647

DO - 10.1117/12.893647

M3 - Conference contribution

SN - 9780819487216

T3 - Proceedings of SPIE - The International Society for Optical Engineering

BT - Next Generation (Nano) Photonic and Cell Technologies for Solar Energy Conversion II

ER -