Development of Ultra-Thin GaAs Photocathodes

Ryan Dowdy; Klaus Attenkofer; Henry Frisch; Seon Woo Lee; Xiuling Li; Steve R. Ross

doi:10.1016/j.phpro.2012.02.439

Development of Ultra-Thin GaAs Photocathodes

Ryan Dowdy, Klaus Attenkofer, Henry Frisch, Seon Woo Lee, Xiuling Li, Steve R. Ross

Research output: Contribution to journal › Conference article › peer-review

Abstract

An ultra thin and highly efficient photocathode structure is designed and optimized for the 400 nm optical wavelength regime. The cathode thickness is comparable to the mean free path of the photoelectron allowing design concepts which are built on non-thermalized photoelectrons. Designs for ultra-low emittance and high quantum efficiency are proposed and first test structures are grown and characterized. Additionally, a discussion on the specifics of the transfer and bonding process of ultra-thin cathodes is presented.

Original language	English (US)
Pages (from-to)	976-984
Number of pages	9
Journal	Physics Procedia
Volume	37
DOIs	https://doi.org/10.1016/j.phpro.2012.02.439
State	Published - 2012
Event	2nd International Conference on Technology and Instrumentation in Particle Physics, TIPP 2011 - Chicago, United States Duration: Jun 9 2011 → Jun 14 2011

Keywords

GaAs L-valley
NEA
Photocathode
blue photocathode
device design
electron momentum
high quantum efficiency
low emmittance
non-thermalized
visible light photodetector

ASJC Scopus subject areas

General Physics and Astronomy

Online availability

10.1016/j.phpro.2012.02.439

Library availability

Discover UIUC Full Text

Cite this

@article{0fa46662232d4591a29c36d12e8c668d,

title = "Development of Ultra-Thin GaAs Photocathodes",

abstract = "An ultra thin and highly efficient photocathode structure is designed and optimized for the 400 nm optical wavelength regime. The cathode thickness is comparable to the mean free path of the photoelectron allowing design concepts which are built on non-thermalized photoelectrons. Designs for ultra-low emittance and high quantum efficiency are proposed and first test structures are grown and characterized. Additionally, a discussion on the specifics of the transfer and bonding process of ultra-thin cathodes is presented.",

keywords = "GaAs L-valley, NEA, Photocathode, blue photocathode, device design, electron momentum, high quantum efficiency, low emmittance, non-thermalized, visible light photodetector",

author = "Ryan Dowdy and Klaus Attenkofer and Henry Frisch and Lee, {Seon Woo} and Xiuling Li and Ross, {Steve R.}",

note = "Publisher Copyright: {\textcopyright} 2011 Published by Elsevier B.; 2nd International Conference on Technology and Instrumentation in Particle Physics, TIPP 2011 ; Conference date: 09-06-2011 Through 14-06-2011",

year = "2012",

doi = "10.1016/j.phpro.2012.02.439",

language = "English (US)",

volume = "37",

pages = "976--984",

journal = "Physics Procedia",

issn = "1875-3884",

publisher = "Elsevier BV",

}

TY - JOUR

T1 - Development of Ultra-Thin GaAs Photocathodes

AU - Dowdy, Ryan

AU - Attenkofer, Klaus

AU - Frisch, Henry

AU - Lee, Seon Woo

AU - Li, Xiuling

AU - Ross, Steve R.

PY - 2012

Y1 - 2012

N2 - An ultra thin and highly efficient photocathode structure is designed and optimized for the 400 nm optical wavelength regime. The cathode thickness is comparable to the mean free path of the photoelectron allowing design concepts which are built on non-thermalized photoelectrons. Designs for ultra-low emittance and high quantum efficiency are proposed and first test structures are grown and characterized. Additionally, a discussion on the specifics of the transfer and bonding process of ultra-thin cathodes is presented.

AB - An ultra thin and highly efficient photocathode structure is designed and optimized for the 400 nm optical wavelength regime. The cathode thickness is comparable to the mean free path of the photoelectron allowing design concepts which are built on non-thermalized photoelectrons. Designs for ultra-low emittance and high quantum efficiency are proposed and first test structures are grown and characterized. Additionally, a discussion on the specifics of the transfer and bonding process of ultra-thin cathodes is presented.

KW - GaAs L-valley

KW - NEA

KW - Photocathode

KW - blue photocathode

KW - device design

KW - electron momentum

KW - high quantum efficiency

KW - low emmittance

KW - non-thermalized

KW - visible light photodetector

UR - http://www.scopus.com/inward/record.url?scp=84913605354&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84913605354&partnerID=8YFLogxK

U2 - 10.1016/j.phpro.2012.02.439

DO - 10.1016/j.phpro.2012.02.439

M3 - Conference article

AN - SCOPUS:84913605354

SN - 1875-3884

VL - 37

SP - 976

EP - 984

JO - Physics Procedia

JF - Physics Procedia

T2 - 2nd International Conference on Technology and Instrumentation in Particle Physics, TIPP 2011

Y2 - 9 June 2011 through 14 June 2011

ER -

Development of Ultra-Thin GaAs Photocathodes

Abstract

Keywords

ASJC Scopus subject areas

Online availability

Library availability

Related links

Fingerprint

Cite this