Development of Ultra-Thin GaAs Photocathodes

Ryan Dowdy, Klaus Attenkofer, Henry Frisch, Seon Woo Lee, Xiuling Li, Steve R. Ross

Research output: Contribution to journalConference article

Abstract

An ultra thin and highly efficient photocathode structure is designed and optimized for the 400 nm optical wavelength regime. The cathode thickness is comparable to the mean free path of the photoelectron allowing design concepts which are built on non-thermalized photoelectrons. Designs for ultra-low emittance and high quantum efficiency are proposed and first test structures are grown and characterized. Additionally, a discussion on the specifics of the transfer and bonding process of ultra-thin cathodes is presented.

Original languageEnglish (US)
Pages (from-to)976-984
Number of pages9
JournalPhysics Procedia
Volume37
DOIs
StatePublished - Jan 1 2012
Event2nd International Conference on Technology and Instrumentation in Particle Physics, TIPP 2011 - Chicago, United States
Duration: Jun 9 2011Jun 14 2011

Keywords

  • GaAs L-valley
  • NEA
  • Photocathode
  • blue photocathode
  • device design
  • electron momentum
  • high quantum efficiency
  • low emmittance
  • non-thermalized
  • visible light photodetector

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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  • Cite this

    Dowdy, R., Attenkofer, K., Frisch, H., Lee, S. W., Li, X., & Ross, S. R. (2012). Development of Ultra-Thin GaAs Photocathodes. Physics Procedia, 37, 976-984. https://doi.org/10.1016/j.phpro.2012.02.439