Development of nonuniform residual stresses during anodic bonding

G. P. Horn, R. Gerbach, T. W. Lin, M. Bernach, S. Brand, H. T. Johnson

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Nonuniform residual stresses may develop during anodic bonding due to variations in wafer curvature prior to bonding or due to nanotopography interactions between the bonding surfaces. In this work, we discuss the significance of nonuniform residual stress in anodically bonded wafer pairs and present a method for measuring local stress variations even in cases when the bonded wafers are apparently defect free based on conventional inspection tools. These residual stresses can vary significantly between two different wafers processed identically, depending on the local interactions, but they are present in all standard bonding methodologies. In some instances, these local residual stresses can significantly alter the resulting wafer curvature in apparently defect free substrates. Currently, anodically bonded devices or substrate wafers are considered "defect free" if no large debonds are found after bonding; however the residual stress state of the wafers cannot be determined using the same conventional techniques.

Original languageEnglish (US)
Title of host publicationSemiconductor Wafer Bonding 11
Subtitle of host publicationScience, Technology, and Applications - In Honor of Ulrich Gosele
Pages553-562
Number of pages10
Edition4
DOIs
StatePublished - Dec 1 2010
EventSemiconductor Wafer Bonding 11: Science, Technology, and Applications - In Honor of Ulrich Gosele - 218th ECS Meeting - Las Vegas, NV, United States
Duration: Oct 10 2010Oct 15 2010

Publication series

NameECS Transactions
Number4
Volume33
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

OtherSemiconductor Wafer Bonding 11: Science, Technology, and Applications - In Honor of Ulrich Gosele - 218th ECS Meeting
CountryUnited States
CityLas Vegas, NV
Period10/10/1010/15/10

Fingerprint

Residual stresses
Defects
Substrates
Inspection

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Horn, G. P., Gerbach, R., Lin, T. W., Bernach, M., Brand, S., & Johnson, H. T. (2010). Development of nonuniform residual stresses during anodic bonding. In Semiconductor Wafer Bonding 11: Science, Technology, and Applications - In Honor of Ulrich Gosele (4 ed., pp. 553-562). (ECS Transactions; Vol. 33, No. 4). https://doi.org/10.1149/1.3483547

Development of nonuniform residual stresses during anodic bonding. / Horn, G. P.; Gerbach, R.; Lin, T. W.; Bernach, M.; Brand, S.; Johnson, H. T.

Semiconductor Wafer Bonding 11: Science, Technology, and Applications - In Honor of Ulrich Gosele. 4. ed. 2010. p. 553-562 (ECS Transactions; Vol. 33, No. 4).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Horn, GP, Gerbach, R, Lin, TW, Bernach, M, Brand, S & Johnson, HT 2010, Development of nonuniform residual stresses during anodic bonding. in Semiconductor Wafer Bonding 11: Science, Technology, and Applications - In Honor of Ulrich Gosele. 4 edn, ECS Transactions, no. 4, vol. 33, pp. 553-562, Semiconductor Wafer Bonding 11: Science, Technology, and Applications - In Honor of Ulrich Gosele - 218th ECS Meeting, Las Vegas, NV, United States, 10/10/10. https://doi.org/10.1149/1.3483547
Horn GP, Gerbach R, Lin TW, Bernach M, Brand S, Johnson HT. Development of nonuniform residual stresses during anodic bonding. In Semiconductor Wafer Bonding 11: Science, Technology, and Applications - In Honor of Ulrich Gosele. 4 ed. 2010. p. 553-562. (ECS Transactions; 4). https://doi.org/10.1149/1.3483547
Horn, G. P. ; Gerbach, R. ; Lin, T. W. ; Bernach, M. ; Brand, S. ; Johnson, H. T. / Development of nonuniform residual stresses during anodic bonding. Semiconductor Wafer Bonding 11: Science, Technology, and Applications - In Honor of Ulrich Gosele. 4. ed. 2010. pp. 553-562 (ECS Transactions; 4).
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