Development of GaN vertical high-power devices enabled by plasma-assisted molecular beam epitaxy

Frank Putnam Kelly; Riley Elis Vesto; Palash Sarker; Fawad Hassan Ismail; Kyekyoon Kim

Development of GaN vertical high-power devices enabled by plasma-assisted molecular beam epitaxy

Frank Putnam Kelly, Riley Elis Vesto, Palash Sarker, Fawad Hassan Ismail, Kyekyoon Kim

Research output: Contribution to conference › Paper › peer-review

Abstract

Selective Area Growth using GaN PAMBE is used to develop vertical device structures suitable for high power electronics. P-doping levels and crystallinity of grown films are confirmed, and a comparison is made between ICP-RIE etched GaN and selectively regrown regions.

Original language	English (US)
State	Published - 2019
Externally published	Yes
Event	2019 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2019 - Minneapolis, United States Duration: Apr 29 2019 → May 2 2019

Conference

Conference	2019 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2019
Country/Territory	United States
City	Minneapolis
Period	4/29/19 → 5/2/19

Keywords

GaN
Ohmic Contact
PAMBE
Selective Area Growth

ASJC Scopus subject areas

Hardware and Architecture
Electrical and Electronic Engineering

Library availability

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Development of GaN vertical high-power devices enabled by plasma-assisted molecular beam epitaxy. / Kelly, Frank Putnam; Vesto, Riley Elis; Sarker, Palash et al.
2019. Paper presented at 2019 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2019, Minneapolis, United States.

Research output: Contribution to conference › Paper › peer-review

@conference{6200b34e056843018aa0d3284b09252f,

title = "Development of GaN vertical high-power devices enabled by plasma-assisted molecular beam epitaxy",

abstract = "Selective Area Growth using GaN PAMBE is used to develop vertical device structures suitable for high power electronics. P-doping levels and crystallinity of grown films are confirmed, and a comparison is made between ICP-RIE etched GaN and selectively regrown regions.",

keywords = "GaN, Ohmic Contact, PAMBE, Selective Area Growth",

author = "Kelly, {Frank Putnam} and Vesto, {Riley Elis} and Palash Sarker and Ismail, {Fawad Hassan} and Kyekyoon Kim",

note = "Publisher Copyright: {\textcopyright} 2019 CS Mantech. All rights reserved.; 2019 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2019 ; Conference date: 29-04-2019 Through 02-05-2019",

year = "2019",

language = "English (US)",

}

TY - CONF

T1 - Development of GaN vertical high-power devices enabled by plasma-assisted molecular beam epitaxy

AU - Kelly, Frank Putnam

AU - Vesto, Riley Elis

AU - Sarker, Palash

AU - Ismail, Fawad Hassan

AU - Kim, Kyekyoon

PY - 2019

Y1 - 2019

N2 - Selective Area Growth using GaN PAMBE is used to develop vertical device structures suitable for high power electronics. P-doping levels and crystallinity of grown films are confirmed, and a comparison is made between ICP-RIE etched GaN and selectively regrown regions.

AB - Selective Area Growth using GaN PAMBE is used to develop vertical device structures suitable for high power electronics. P-doping levels and crystallinity of grown films are confirmed, and a comparison is made between ICP-RIE etched GaN and selectively regrown regions.

KW - GaN

KW - Ohmic Contact

KW - PAMBE

KW - Selective Area Growth

UR - http://www.scopus.com/inward/record.url?scp=85067017293&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85067017293&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:85067017293

T2 - 2019 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2019

Y2 - 29 April 2019 through 2 May 2019

ER -

Development of GaN vertical high-power devices enabled by plasma-assisted molecular beam epitaxy

Abstract

Conference

Keywords

ASJC Scopus subject areas

Library availability

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