Development of GaN vertical high-power devices enabled by plasma-assisted molecular beam epitaxy

Frank Putnam Kelly, Riley Elis Vesto, Palash Sarker, Fawad Hassan Ismail, Kyekyoon Kim

Research output: Contribution to conferencePaper

Abstract

Selective Area Growth using GaN PAMBE is used to develop vertical device structures suitable for high power electronics. P-doping levels and crystallinity of grown films are confirmed, and a comparison is made between ICP-RIE etched GaN and selectively regrown regions. Imaging of each step of the process is shown and discussed, and future plans are outlined

Original languageEnglish (US)
StatePublished - Jan 1 2019
Event2019 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2019 - Minneapolis, United States
Duration: Apr 29 2019May 2 2019

Conference

Conference2019 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2019
CountryUnited States
CityMinneapolis
Period4/29/195/2/19

Keywords

  • GaN
  • Ohmic Contact
  • PAMBE
  • Selective Area Growth

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering

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  • Cite this

    Kelly, F. P., Vesto, R. E., Sarker, P., Ismail, F. H., & Kim, K. (2019). Development of GaN vertical high-power devices enabled by plasma-assisted molecular beam epitaxy. Paper presented at 2019 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2019, Minneapolis, United States.