Development of bottom-emitting 1300-nm vertical-cavity surface-emitting lasers

D. A. Louderback, M. A. Fish, J. F. Klem, D. K. Serkland, K. D. Choquette, G. W. Pickrell, R. V. Stone, P. S. Guilfoyle

Research output: Contribution to journalArticlepeer-review


We present experimental results on the development of bottom-emitting GaInNAs vertical-cavity surface-emitting lasers (VCSELs) operating at wavelengths near 1300 nm. This development effort is based on the modification of oxide-apertured top-emitting structures to allow emission through the GaAs substrate. Similar device performance was seen in both the top- and bottom-emitting structures. Single-mode output powers (adjusted for substrate absorption) of ∼0.75 mW, with threshold currents of 1.3 mA, were achieved with ∼3.5-μm aperture diameters. Larger multimode devices exhibited a maximum adjusted output power of 2.2 mW. To the best of our knowledge, these are the first bottom-emitting flip-chip compatible 1300-nm VCSELs fabricated with GaInNAs-GaAs active regions.

Original languageEnglish (US)
Pages (from-to)963-965
Number of pages3
JournalIEEE Photonics Technology Letters
Issue number4
StatePublished - Apr 2004


  • 1300 nm
  • Bottom-emitting
  • Flip chip
  • InGaAsN
  • Optical communications
  • Vertical-cavity surface-emitting laser (VCSEL)

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering


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