Development of bottom-emitting 1300-nm vertical-cavity surface-emitting lasers

D. A. Louderback; M. A. Fish; J. F. Klem; D. K. Serkland; K. D. Choquette; G. W. Pickrell; R. V. Stone; P. S. Guilfoyle

doi:10.1109/LPT.2004.824614

Development of bottom-emitting 1300-nm vertical-cavity surface-emitting lasers

D. A. Louderback, M. A. Fish, J. F. Klem, D. K. Serkland, K. D. Choquette, G. W. Pickrell, R. V. Stone, P. S. Guilfoyle

Research output: Contribution to journal › Article › peer-review

Abstract

We present experimental results on the development of bottom-emitting GaInNAs vertical-cavity surface-emitting lasers (VCSELs) operating at wavelengths near 1300 nm. This development effort is based on the modification of oxide-apertured top-emitting structures to allow emission through the GaAs substrate. Similar device performance was seen in both the top- and bottom-emitting structures. Single-mode output powers (adjusted for substrate absorption) of ∼0.75 mW, with threshold currents of 1.3 mA, were achieved with ∼3.5-μm aperture diameters. Larger multimode devices exhibited a maximum adjusted output power of 2.2 mW. To the best of our knowledge, these are the first bottom-emitting flip-chip compatible 1300-nm VCSELs fabricated with GaInNAs-GaAs active regions.

Original language	English (US)
Pages (from-to)	963-965
Number of pages	3
Journal	IEEE Photonics Technology Letters
Volume	16
Issue number	4
DOIs	https://doi.org/10.1109/LPT.2004.824614
State	Published - Apr 2004

Keywords

1300 nm
Bottom-emitting
Flip chip
InGaAsN
Optical communications
Vertical-cavity surface-emitting laser (VCSEL)

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

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10.1109/LPT.2004.824614

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title = "Development of bottom-emitting 1300-nm vertical-cavity surface-emitting lasers",

abstract = "We present experimental results on the development of bottom-emitting GaInNAs vertical-cavity surface-emitting lasers (VCSELs) operating at wavelengths near 1300 nm. This development effort is based on the modification of oxide-apertured top-emitting structures to allow emission through the GaAs substrate. Similar device performance was seen in both the top- and bottom-emitting structures. Single-mode output powers (adjusted for substrate absorption) of ∼0.75 mW, with threshold currents of 1.3 mA, were achieved with ∼3.5-μm aperture diameters. Larger multimode devices exhibited a maximum adjusted output power of 2.2 mW. To the best of our knowledge, these are the first bottom-emitting flip-chip compatible 1300-nm VCSELs fabricated with GaInNAs-GaAs active regions.",

keywords = "1300 nm, Bottom-emitting, Flip chip, InGaAsN, Optical communications, Vertical-cavity surface-emitting laser (VCSEL)",

author = "Louderback, {D. A.} and Fish, {M. A.} and Klem, {J. F.} and Serkland, {D. K.} and Choquette, {K. D.} and Pickrell, {G. W.} and Stone, {R. V.} and Guilfoyle, {P. S.}",

note = "Funding Information: Manuscript received June 4, 2003; revised September 16, 2003. This work was supported in part by the Missile Defense Agency (MDA). Sandia National Laboratories is operated by Sandia Corporation, a Lockheed Martin Company, for the U.S. Department of Energy{\textquoteright}s National Nuclear Security Administration under Contract DE-AC04-94AL85000.",

year = "2004",

month = apr,

doi = "10.1109/LPT.2004.824614",

language = "English (US)",

volume = "16",

pages = "963--965",

journal = "IEEE Photonics Technology Letters",

issn = "1041-1135",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "4",

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TY - JOUR

T1 - Development of bottom-emitting 1300-nm vertical-cavity surface-emitting lasers

AU - Louderback, D. A.

AU - Fish, M. A.

AU - Klem, J. F.

AU - Serkland, D. K.

AU - Choquette, K. D.

AU - Pickrell, G. W.

AU - Stone, R. V.

AU - Guilfoyle, P. S.

N1 - Funding Information: Manuscript received June 4, 2003; revised September 16, 2003. This work was supported in part by the Missile Defense Agency (MDA). Sandia National Laboratories is operated by Sandia Corporation, a Lockheed Martin Company, for the U.S. Department of Energy’s National Nuclear Security Administration under Contract DE-AC04-94AL85000.

PY - 2004/4

Y1 - 2004/4

N2 - We present experimental results on the development of bottom-emitting GaInNAs vertical-cavity surface-emitting lasers (VCSELs) operating at wavelengths near 1300 nm. This development effort is based on the modification of oxide-apertured top-emitting structures to allow emission through the GaAs substrate. Similar device performance was seen in both the top- and bottom-emitting structures. Single-mode output powers (adjusted for substrate absorption) of ∼0.75 mW, with threshold currents of 1.3 mA, were achieved with ∼3.5-μm aperture diameters. Larger multimode devices exhibited a maximum adjusted output power of 2.2 mW. To the best of our knowledge, these are the first bottom-emitting flip-chip compatible 1300-nm VCSELs fabricated with GaInNAs-GaAs active regions.

AB - We present experimental results on the development of bottom-emitting GaInNAs vertical-cavity surface-emitting lasers (VCSELs) operating at wavelengths near 1300 nm. This development effort is based on the modification of oxide-apertured top-emitting structures to allow emission through the GaAs substrate. Similar device performance was seen in both the top- and bottom-emitting structures. Single-mode output powers (adjusted for substrate absorption) of ∼0.75 mW, with threshold currents of 1.3 mA, were achieved with ∼3.5-μm aperture diameters. Larger multimode devices exhibited a maximum adjusted output power of 2.2 mW. To the best of our knowledge, these are the first bottom-emitting flip-chip compatible 1300-nm VCSELs fabricated with GaInNAs-GaAs active regions.

KW - 1300 nm

KW - Bottom-emitting

KW - Flip chip

KW - InGaAsN

KW - Optical communications

KW - Vertical-cavity surface-emitting laser (VCSEL)

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Development of bottom-emitting 1300-nm vertical-cavity surface-emitting lasers

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