Development of 90nm InGaAs HEMTs and benchmarking logic performance with Si CMOS

Kuang Yu Cheng, Doris Chan, Fei Tan, Huiming Xu, Milton Feng, Chih Hsin Ko, Clement Wann

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We have developed 90nm In0.7Ga0.3As channel HEMTs, directly measured of DC and RF characteristics, and performed microwave modeling for both 90nm Si CMOS and HEMT for benchmarking logic performance for future design layout and process improvement.

Original languageEnglish (US)
Title of host publication2010 IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2010 - Technical Digest 2010
DOIs
StatePublished - 2010
Event2010 32nd IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2010 - Monterey, CA, United States
Duration: Oct 3 2010Oct 6 2010

Publication series

NameTechnical Digest - IEEE Compound Semiconductor Integrated Circuit Symposium, CSIC
ISSN (Print)1550-8781

Other

Other2010 32nd IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2010
CountryUnited States
CityMonterey, CA
Period10/3/1010/6/10

Keywords

  • CMOS
  • Device modeling
  • HEMTs
  • Microwave measurements

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials

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