Development of 90nm InGaAs HEMTs and benchmarking logic performance with Si CMOS

Kuang Yu Cheng; Doris Chan; Fei Tan; Huiming Xu; Milton Feng; Chih Hsin Ko; Clement Wann

doi:10.1109/CSICS.2010.5619674

Development of 90nm InGaAs HEMTs and benchmarking logic performance with Si CMOS

Kuang Yu Cheng, Doris Chan, Fei Tan, Huiming Xu, Milton Feng, Chih Hsin Ko, Clement Wann

Electrical and Computer Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

We have developed 90nm In_0.7Ga_0.3As channel HEMTs, directly measured of DC and RF characteristics, and performed microwave modeling for both 90nm Si CMOS and HEMT for benchmarking logic performance for future design layout and process improvement.

Original language	English (US)
Title of host publication	2010 IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2010 - Technical Digest 2010
DOIs	https://doi.org/10.1109/CSICS.2010.5619674
State	Published - 2010
Event	2010 32nd IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2010 - Monterey, CA, United States Duration: Oct 3 2010 → Oct 6 2010

Publication series

Name	Technical Digest - IEEE Compound Semiconductor Integrated Circuit Symposium, CSIC
ISSN (Print)	1550-8781

Other

Other	2010 32nd IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2010
Country/Territory	United States
City	Monterey, CA
Period	10/3/10 → 10/6/10

Keywords

CMOS
Device modeling
HEMTs
Microwave measurements

ASJC Scopus subject areas

Electrical and Electronic Engineering
Condensed Matter Physics
Electronic, Optical and Magnetic Materials

Online availability

10.1109/CSICS.2010.5619674

Library availability

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Cheng, K. Y., Chan, D., Tan, F., Xu, H., Feng, M., Ko, C. H., & Wann, C. (2010). Development of 90nm InGaAs HEMTs and benchmarking logic performance with Si CMOS. In 2010 IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2010 - Technical Digest 2010 Article 5619674 (Technical Digest - IEEE Compound Semiconductor Integrated Circuit Symposium, CSIC). https://doi.org/10.1109/CSICS.2010.5619674

Development of 90nm InGaAs HEMTs and benchmarking logic performance with Si CMOS. / Cheng, Kuang Yu; Chan, Doris; Tan, Fei et al.
2010 IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2010 - Technical Digest 2010. 2010. 5619674 (Technical Digest - IEEE Compound Semiconductor Integrated Circuit Symposium, CSIC).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Cheng, KY, Chan, D, Tan, F, Xu, H, Feng, M, Ko, CH & Wann, C 2010, Development of 90nm InGaAs HEMTs and benchmarking logic performance with Si CMOS. in 2010 IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2010 - Technical Digest 2010., 5619674, Technical Digest - IEEE Compound Semiconductor Integrated Circuit Symposium, CSIC, 2010 32nd IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2010, Monterey, CA, United States, 10/3/10. https://doi.org/10.1109/CSICS.2010.5619674

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title = "Development of 90nm InGaAs HEMTs and benchmarking logic performance with Si CMOS",

abstract = "We have developed 90nm In0.7Ga0.3As channel HEMTs, directly measured of DC and RF characteristics, and performed microwave modeling for both 90nm Si CMOS and HEMT for benchmarking logic performance for future design layout and process improvement.",

keywords = "CMOS, Device modeling, HEMTs, Microwave measurements",

author = "Cheng, {Kuang Yu} and Doris Chan and Fei Tan and Huiming Xu and Milton Feng and Ko, {Chih Hsin} and Clement Wann",

year = "2010",

doi = "10.1109/CSICS.2010.5619674",

language = "English (US)",

isbn = "9781424474387",

series = "Technical Digest - IEEE Compound Semiconductor Integrated Circuit Symposium, CSIC",

booktitle = "2010 IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2010 - Technical Digest 2010",

note = "2010 32nd IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2010 ; Conference date: 03-10-2010 Through 06-10-2010",

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T1 - Development of 90nm InGaAs HEMTs and benchmarking logic performance with Si CMOS

AU - Cheng, Kuang Yu

AU - Chan, Doris

AU - Tan, Fei

AU - Xu, Huiming

AU - Feng, Milton

AU - Ko, Chih Hsin

AU - Wann, Clement

PY - 2010

Y1 - 2010

N2 - We have developed 90nm In0.7Ga0.3As channel HEMTs, directly measured of DC and RF characteristics, and performed microwave modeling for both 90nm Si CMOS and HEMT for benchmarking logic performance for future design layout and process improvement.

AB - We have developed 90nm In0.7Ga0.3As channel HEMTs, directly measured of DC and RF characteristics, and performed microwave modeling for both 90nm Si CMOS and HEMT for benchmarking logic performance for future design layout and process improvement.

KW - CMOS

KW - Device modeling

KW - HEMTs

KW - Microwave measurements

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DO - 10.1109/CSICS.2010.5619674

M3 - Conference contribution

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SN - 9781424474387

T3 - Technical Digest - IEEE Compound Semiconductor Integrated Circuit Symposium, CSIC

BT - 2010 IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2010 - Technical Digest 2010

T2 - 2010 32nd IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2010

Y2 - 3 October 2010 through 6 October 2010

ER -

Development of 90nm InGaAs HEMTs and benchmarking logic performance with Si CMOS

Abstract

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Keywords

ASJC Scopus subject areas

Online availability

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