Deuterium process of CMOS devices: New phenomena and dramatic improvement

Zhi Chen, Jinju Lee, Joseph W Lyding, Karl Hess

Research output: Contribution to journalConference article

Abstract

When CMOS devices were annealed in D2 in instead of H2, the slope, n, of the degradation power law is smaller than that for the H2 processed devices. At higher process temperature (480 °C), the power index, n, becomes voltage dependent. This results in dramatic enhancement of life time (over 106 times). 10-30% higher channel electrical field can be applied to the D2 annealed devices.

Original languageEnglish (US)
Pages (from-to)180-181
Number of pages2
JournalDigest of Technical Papers - Symposium on VLSI Technology
StatePublished - Jan 1 1998
EventProceedings of the 1998 Symposium on VLSI Technology - Honolulu, HI, USA
Duration: Jun 9 1998Jun 11 1998

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Deuterium
Degradation
Electric potential
Temperature

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Deuterium process of CMOS devices : New phenomena and dramatic improvement. / Chen, Zhi; Lee, Jinju; Lyding, Joseph W; Hess, Karl.

In: Digest of Technical Papers - Symposium on VLSI Technology, 01.01.1998, p. 180-181.

Research output: Contribution to journalConference article

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