Deuterium process of CMOS devices: New phenomena and dramatic improvement

Zhi Chen; Jinju Lee; Joseph W Lyding; Karl Hess

Deuterium process of CMOS devices: New phenomena and dramatic improvement

Zhi Chen, Jinju Lee, Joseph W Lyding, Karl Hess

Research output: Contribution to journal › Conference article › peer-review

Abstract

When CMOS devices were annealed in D₂ in instead of H₂, the slope, n, of the degradation power law is smaller than that for the H₂ processed devices. At higher process temperature (480 °C), the power index, n, becomes voltage dependent. This results in dramatic enhancement of life time (over 10⁶ times). 10-30% higher channel electrical field can be applied to the D₂ annealed devices.

Original language	English (US)
Pages (from-to)	180-181
Number of pages	2
Journal	Digest of Technical Papers - Symposium on VLSI Technology
State	Published - 1998
Event	Proceedings of the 1998 Symposium on VLSI Technology - Honolulu, HI, USA Duration: Jun 9 1998 → Jun 11 1998

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Electrical and Electronic Engineering

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title = "Deuterium process of CMOS devices: New phenomena and dramatic improvement",

abstract = "When CMOS devices were annealed in D2 in instead of H2, the slope, n, of the degradation power law is smaller than that for the H2 processed devices. At higher process temperature (480 °C), the power index, n, becomes voltage dependent. This results in dramatic enhancement of life time (over 106 times). 10-30% higher channel electrical field can be applied to the D2 annealed devices.",

author = "Zhi Chen and Jinju Lee and Lyding, {Joseph W} and Karl Hess",

year = "1998",

language = "English (US)",

pages = "180--181",

journal = "Digest of Technical Papers - Symposium on VLSI Technology",

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note = "Proceedings of the 1998 Symposium on VLSI Technology ; Conference date: 09-06-1998 Through 11-06-1998",

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AU - Hess, Karl

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AB - When CMOS devices were annealed in D2 in instead of H2, the slope, n, of the degradation power law is smaller than that for the H2 processed devices. At higher process temperature (480 °C), the power index, n, becomes voltage dependent. This results in dramatic enhancement of life time (over 106 times). 10-30% higher channel electrical field can be applied to the D2 annealed devices.

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Y2 - 9 June 1998 through 11 June 1998

ER -

Deuterium process of CMOS devices: New phenomena and dramatic improvement

Abstract

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