Abstract
When CMOS devices were annealed in D2 in instead of H2, the slope, n, of the degradation power law is smaller than that for the H2 processed devices. At higher process temperature (480 °C), the power index, n, becomes voltage dependent. This results in dramatic enhancement of life time (over 106 times). 10-30% higher channel electrical field can be applied to the D2 annealed devices.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 180-181 |
| Number of pages | 2 |
| Journal | Digest of Technical Papers - Symposium on VLSI Technology |
| State | Published - Jan 1 1998 |
| Event | Proceedings of the 1998 Symposium on VLSI Technology - Honolulu, HI, USA Duration: Jun 9 1998 → Jun 11 1998 |
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ASJC Scopus subject areas
- Electrical and Electronic Engineering
Cite this
Deuterium process of CMOS devices : New phenomena and dramatic improvement. / Chen, Zhi; Lee, Jinju; Lyding, Joseph W; Hess, Karl.
In: Digest of Technical Papers - Symposium on VLSI Technology, 01.01.1998, p. 180-181.Research output: Contribution to journal › Conference article
}
TY - JOUR
T1 - Deuterium process of CMOS devices
T2 - New phenomena and dramatic improvement
AU - Chen, Zhi
AU - Lee, Jinju
AU - Lyding, Joseph W
AU - Hess, Karl
PY - 1998/1/1
Y1 - 1998/1/1
N2 - When CMOS devices were annealed in D2 in instead of H2, the slope, n, of the degradation power law is smaller than that for the H2 processed devices. At higher process temperature (480 °C), the power index, n, becomes voltage dependent. This results in dramatic enhancement of life time (over 106 times). 10-30% higher channel electrical field can be applied to the D2 annealed devices.
AB - When CMOS devices were annealed in D2 in instead of H2, the slope, n, of the degradation power law is smaller than that for the H2 processed devices. At higher process temperature (480 °C), the power index, n, becomes voltage dependent. This results in dramatic enhancement of life time (over 106 times). 10-30% higher channel electrical field can be applied to the D2 annealed devices.
UR - http://www.scopus.com/inward/record.url?scp=0031619815&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0031619815&partnerID=8YFLogxK
M3 - Conference article
AN - SCOPUS:0031619815
SP - 180
EP - 181
JO - Digest of Technical Papers - Symposium on VLSI Technology
JF - Digest of Technical Papers - Symposium on VLSI Technology
SN - 0743-1562
ER -