Deuterium pressure dependence of characteristics and hot-carrier reliability of CMOS devices

Kangguo Cheng, Jinju Lee, Zhi Chen, Samir Shah, Karl Hess, Joseph W. Lyding, Young Kwang Kim, Young Wug Kim, Kuwang Pyuk Suh

Research output: Contribution to journalArticlepeer-review


Deuterium annealing has been widely demonstrated to be an effective way to improve the hot-carrier reliability of MOS devices. In this paper, we present a thorough study of the effect of deuterium pressure on the characteristics and hot-carrier reliability of MOS devices. N-channel submicron MOS transistors were annealed in deuterium with various pressures, temperatures and annealing times. It is found that device reliability initially improves as deuterium pressure is increased. It reaches a maximum and then begins to degrade with further increase of pressure. For the devices after hydrogen anneal, device reliability constantly degrades as the hydrogen pressure increases. It is concluded that the benefit of high pressure deuterium processing on device reliability is attributed to improved deuterium incorporation, while annealing-induced interface trap creation can negate the benefit at extreme high pressure. It is further shown that the processing temperature can be lowered with high pressure while still maintaining the deuteration benefit. This is particularly significant for future CMOS technology that requires a reduced thermal budget.

Original languageEnglish (US)
Pages (from-to)353-358
Number of pages6
JournalMicroelectronic Engineering
Issue number3-4
StatePublished - Aug 2001


  • CMOS devices
  • Deuterium
  • Hot-carrier effects
  • Interface trap
  • Reliability
  • Silicon oxide

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering


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