Deuterium post metal annealing of MOSFETs for improved hot carrier reliability

I. C. Kizilyalli, Joseph W Lyding, K. Hess

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

SIMS analysis results prove that at typical anneal temperatures (400-450 C), deuterium diffuses rapidly through the interlevel oxides and accumulates at Si/SiO2 interface. The improved hot electron reliability phenomena can be understood as a kinetic isotope effect where chemical reaction rates involving heavier isotopes are reduced, and consequently under hot electron stress, bonds to deuterium are broken much slower than bonds to protium (H). However, the static chemical bonding is evidently the same for both hydrogen and deuterium since identical transistor function is measured after hydrogen and deuterium treatment prior to hot electron dynamics and resultant damage. Therefore, it is suggested that deuterium and hydrogen post metal anneal processes are compatible with each other in semiconductor manufacturing. Recent hot electron stress data taken using a development version of Lucent Technologies 0.35 μm 3.3 V CMOS technology is presented as a confirmation of the original results. Transistor speed versus reliability trade-off in CMOS device design is also discussed in light of the findings of this study.

Original languageEnglish (US)
Title of host publicationAnnual Device Research Conference Digest
PublisherIEEE
Pages14-15
Number of pages2
StatePublished - 1996
Externally publishedYes
EventProceedings of the 1996 54th Annual Device Research Conference Digest, DRC - Santa Barbara, CA, USA
Duration: Jun 24 1996Jun 26 1996

Other

OtherProceedings of the 1996 54th Annual Device Research Conference Digest, DRC
CitySanta Barbara, CA, USA
Period6/24/966/26/96

Fingerprint

Hot carriers
Deuterium
Hot electrons
Annealing
Metals
Hydrogen
Isotopes
Transistors
Secondary ion mass spectrometry
Reaction rates
Chemical reactions
Semiconductor materials
Kinetics
Oxides
Temperature

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Kizilyalli, I. C., Lyding, J. W., & Hess, K. (1996). Deuterium post metal annealing of MOSFETs for improved hot carrier reliability. In Annual Device Research Conference Digest (pp. 14-15). IEEE.

Deuterium post metal annealing of MOSFETs for improved hot carrier reliability. / Kizilyalli, I. C.; Lyding, Joseph W; Hess, K.

Annual Device Research Conference Digest. IEEE, 1996. p. 14-15.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Kizilyalli, IC, Lyding, JW & Hess, K 1996, Deuterium post metal annealing of MOSFETs for improved hot carrier reliability. in Annual Device Research Conference Digest. IEEE, pp. 14-15, Proceedings of the 1996 54th Annual Device Research Conference Digest, DRC, Santa Barbara, CA, USA, 6/24/96.
Kizilyalli IC, Lyding JW, Hess K. Deuterium post metal annealing of MOSFETs for improved hot carrier reliability. In Annual Device Research Conference Digest. IEEE. 1996. p. 14-15
Kizilyalli, I. C. ; Lyding, Joseph W ; Hess, K. / Deuterium post metal annealing of MOSFETs for improved hot carrier reliability. Annual Device Research Conference Digest. IEEE, 1996. pp. 14-15
@inproceedings{a1dfd74ba6494c4ba7256daebf865ff9,
title = "Deuterium post metal annealing of MOSFETs for improved hot carrier reliability",
abstract = "SIMS analysis results prove that at typical anneal temperatures (400-450 C), deuterium diffuses rapidly through the interlevel oxides and accumulates at Si/SiO2 interface. The improved hot electron reliability phenomena can be understood as a kinetic isotope effect where chemical reaction rates involving heavier isotopes are reduced, and consequently under hot electron stress, bonds to deuterium are broken much slower than bonds to protium (H). However, the static chemical bonding is evidently the same for both hydrogen and deuterium since identical transistor function is measured after hydrogen and deuterium treatment prior to hot electron dynamics and resultant damage. Therefore, it is suggested that deuterium and hydrogen post metal anneal processes are compatible with each other in semiconductor manufacturing. Recent hot electron stress data taken using a development version of Lucent Technologies 0.35 μm 3.3 V CMOS technology is presented as a confirmation of the original results. Transistor speed versus reliability trade-off in CMOS device design is also discussed in light of the findings of this study.",
author = "Kizilyalli, {I. C.} and Lyding, {Joseph W} and K. Hess",
year = "1996",
language = "English (US)",
pages = "14--15",
booktitle = "Annual Device Research Conference Digest",
publisher = "IEEE",

}

TY - GEN

T1 - Deuterium post metal annealing of MOSFETs for improved hot carrier reliability

AU - Kizilyalli, I. C.

AU - Lyding, Joseph W

AU - Hess, K.

PY - 1996

Y1 - 1996

N2 - SIMS analysis results prove that at typical anneal temperatures (400-450 C), deuterium diffuses rapidly through the interlevel oxides and accumulates at Si/SiO2 interface. The improved hot electron reliability phenomena can be understood as a kinetic isotope effect where chemical reaction rates involving heavier isotopes are reduced, and consequently under hot electron stress, bonds to deuterium are broken much slower than bonds to protium (H). However, the static chemical bonding is evidently the same for both hydrogen and deuterium since identical transistor function is measured after hydrogen and deuterium treatment prior to hot electron dynamics and resultant damage. Therefore, it is suggested that deuterium and hydrogen post metal anneal processes are compatible with each other in semiconductor manufacturing. Recent hot electron stress data taken using a development version of Lucent Technologies 0.35 μm 3.3 V CMOS technology is presented as a confirmation of the original results. Transistor speed versus reliability trade-off in CMOS device design is also discussed in light of the findings of this study.

AB - SIMS analysis results prove that at typical anneal temperatures (400-450 C), deuterium diffuses rapidly through the interlevel oxides and accumulates at Si/SiO2 interface. The improved hot electron reliability phenomena can be understood as a kinetic isotope effect where chemical reaction rates involving heavier isotopes are reduced, and consequently under hot electron stress, bonds to deuterium are broken much slower than bonds to protium (H). However, the static chemical bonding is evidently the same for both hydrogen and deuterium since identical transistor function is measured after hydrogen and deuterium treatment prior to hot electron dynamics and resultant damage. Therefore, it is suggested that deuterium and hydrogen post metal anneal processes are compatible with each other in semiconductor manufacturing. Recent hot electron stress data taken using a development version of Lucent Technologies 0.35 μm 3.3 V CMOS technology is presented as a confirmation of the original results. Transistor speed versus reliability trade-off in CMOS device design is also discussed in light of the findings of this study.

UR - http://www.scopus.com/inward/record.url?scp=0029703202&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0029703202&partnerID=8YFLogxK

M3 - Conference contribution

SP - 14

EP - 15

BT - Annual Device Research Conference Digest

PB - IEEE

ER -