Deuterium passivation in CMOS technology

Joseph W. Lyding, Jinju Lee, Kangguo Cheng, Peter M. Albrecht, Laura B. Ruppalt, Karl Hess

Research output: Contribution to conferencePaper

Abstract

A giant deuterium isotope effect discovered during atomic scale STM hydrogen desorption experiments on the Si(100) surface was found to translate to CMOS technology where hot carriers are also responsible for hydrogen desorption at the oxide-silicon interface. In addition to direct electron stimulated desorption, a multiple electron vibrational heating hydrogen desorption mechanism was also observed in the STM experiments. In CMOS this latter mechanism would give rise to degradation at low supply voltages that would increase rapidly with increasing channel current density. Deuterium has also been used to show that under normal stressing conditions the channel hot carriers dominate the interface degradation process. High pressure deuterium processing is also discussed as a means to overcome background hydrogen and to accommodate the lower thermal budgets of recent technology. Finally, the ultraclean integration of carbon nanotubes with semiconductor surfaces will be demonstrated for exploring key issues of these interesting hybrid systems.

Original languageEnglish (US)
Pages135-143
Number of pages9
StatePublished - Dec 1 2005
Event35th European Solid State Device Research Conference - Grenoble, France
Duration: Sep 15 2005Sep 16 2005

Other

Other35th European Solid State Device Research Conference
CountryFrance
CityGrenoble
Period9/15/059/16/05

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ASJC Scopus subject areas

  • Engineering(all)

Cite this

Lyding, J. W., Lee, J., Cheng, K., Albrecht, P. M., Ruppalt, L. B., & Hess, K. (2005). Deuterium passivation in CMOS technology. 135-143. Paper presented at 35th European Solid State Device Research Conference, Grenoble, France.